component
IPB80P04P407ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPB80P04P407ATMA1
Infineon Technologies · MOSFETs · TO-263
IPB80P04P407ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of -2.0 to -4.0 V at ID=-150 µA. |
| 2 | Drain | passive | Drain terminal, also the exposed tab (pin 2/Tab), rated for VDS of -40 V and continuous ID of -80 A at TC=25 °C. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, carrying up to -80 A continuous at TC=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | -80 | A | TC=25°C, VGS=-10V | 1 | ||
| Continuous drain current | ID | 62 | A | TC=100°C, VGS=-10V | 1 | ||
| Pulsed drain current | ID,pulse | -320 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 31 | mJ | ID=-40A | 1 | ||
| Avalanche current, single pulse | IAS | -80 | A | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 88 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 1.7 | K/W | 2 | |||
| Thermal resistance, junction-ambient, leaded | RthJA | 62 | K/W | 2 | |||
| Thermal resistance, junction-ambient, SMD | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction-ambient, SMD | RthJA | 40 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-1mA | 2 | ||
| Gate threshold voltage | VGS(th) | -2 | -3 | -4 | V | VDS=VGS, ID=-150µA | 2 |
| Zero gate voltage drain current | IDSS | -0.05 | -1 | µA | VDS=-32V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | -20 | -200 | µA | VDS=-32V, VGS=0V, Tj=125°C | 2 | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 5.7 | 7.7 | mW | VGS=-10V, ID=-80A | 2 | |
| Drain-source on-state resistance, SMD version | RDS(on) | 5.4 | 7.4 | mW | VGS=-10V, ID=-80A, SMD version | 2 | |
| Input capacitance | Ciss | 4681 | 6085 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Output capacitance | Coss | 1520 | 2280 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 45 | 91 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Turn-on delay time | td(on) | 25 | ns | VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W | 3 | ||
| Rise time | tr | 15 | ns | VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W | 3 | ||
| Turn-off delay time | td(off) | 34 | ns | VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W | 3 | ||
| Fall time | tf | 41 | ns | VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W | 3 | ||
| Gate to source charge | Qgs | 25 | 33 | nC | VDD=-32V, ID=-80A, VGS=0 to -10V | 3 | |
| Gate to drain charge | Qgd | 13 | 26 | nC | VDD=-32V, ID=-80A, VGS=0 to -10V | 3 | |
| Gate charge total | Qg | 68 | 89 | nC | VDD=-32V, ID=-80A, VGS=0 to -10V | 3 | |
| Gate plateau voltage | Vplateau | -5.4 | V | VDD=-32V, ID=-80A, VGS=0 to -10V | 3 | ||
| Diode continuous forward current | IS | -80 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | -320 | A | TC=25°C | 3 | ||
| Diode forward voltage | VSD | -1 | -1.3 | V | VGS=0V, IF=-80A, Tj=25°C | 3 | |
| Reverse recovery time | trr | 48 | ns | VR=-20V, IF=-50A, diF/dt=-100A/µs | 3 | ||
| Reverse recovery charge | Qrr | 54 | nC | VR=-20V, IF=-50A, diF/dt=-100A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPB80P04P407ATMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb80p04p407atma1-etched.step/ipb80p04p407atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb80p04p407atma1.step/ipb80p04p407atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
e37e4dd2dc390395, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).