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IPB80P04P407ATMA1

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Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPB80P04P407ATMA1

Infineon Technologies · MOSFETs · TO-263

IPB80P04P407ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of -2.0 to -4.0 V at ID=-150 µA.
2 Drain passive Drain terminal, also the exposed tab (pin 2/Tab), rated for VDS of -40 V and continuous ID of -80 A at TC=25 °C.
3 Source passive Source terminal of the P-channel MOSFET, carrying up to -80 A continuous at TC=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID -80 A TC=25°C, VGS=-10V 1
Continuous drain current ID 62 A TC=100°C, VGS=-10V 1
Pulsed drain current ID,pulse -320 A TC=25°C 1
Avalanche energy, single pulse EAS 31 mJ ID=-40A 1
Avalanche current, single pulse IAS -80 A 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 88 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction-case RthJC 1.7 K/W 2
Thermal resistance, junction-ambient, leaded RthJA 62 K/W 2
Thermal resistance, junction-ambient, SMD RthJA 62 K/W minimal footprint 2
Thermal resistance, junction-ambient, SMD RthJA 40 K/W 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS -40 V VGS=0V, ID=-1mA 2
Gate threshold voltage VGS(th) -2 -3 -4 V VDS=VGS, ID=-150µA 2
Zero gate voltage drain current IDSS -0.05 -1 µA VDS=-32V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS -20 -200 µA VDS=-32V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS -100 nA VGS=-20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 5.7 7.7 mW VGS=-10V, ID=-80A 2
Drain-source on-state resistance, SMD version RDS(on) 5.4 7.4 mW VGS=-10V, ID=-80A, SMD version 2
Input capacitance Ciss 4681 6085 pF VGS=0V, VDS=-25V, f=1MHz 3
Output capacitance Coss 1520 2280 pF VGS=0V, VDS=-25V, f=1MHz 3
Reverse transfer capacitance Crss 45 91 pF VGS=0V, VDS=-25V, f=1MHz 3
Turn-on delay time td(on) 25 ns VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W 3
Rise time tr 15 ns VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W 3
Turn-off delay time td(off) 34 ns VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W 3
Fall time tf 41 ns VDD=-20V, VGS=-10V, ID=-80A, RG=3.5W 3
Gate to source charge Qgs 25 33 nC VDD=-32V, ID=-80A, VGS=0 to -10V 3
Gate to drain charge Qgd 13 26 nC VDD=-32V, ID=-80A, VGS=0 to -10V 3
Gate charge total Qg 68 89 nC VDD=-32V, ID=-80A, VGS=0 to -10V 3
Gate plateau voltage Vplateau -5.4 V VDD=-32V, ID=-80A, VGS=0 to -10V 3
Diode continuous forward current IS -80 A TC=25°C 3
Diode pulse current IS,pulse -320 A TC=25°C 3
Diode forward voltage VSD -1 -1.3 V VGS=0V, IF=-80A, Tj=25°C 3
Reverse recovery time trr 48 ns VR=-20V, IF=-50A, diF/dt=-100A/µs 3
Reverse recovery charge Qrr 54 nC VR=-20V, IF=-50A, diF/dt=-100A/µs 3

CAD (KiCad official)

  • Symbol: IPB80P04P407ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb80p04p407atma1-etched.step / ipb80p04p407atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb80p04p407atma1.step / ipb80p04p407atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 e37e4dd2dc390395, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF