component
RD3P130SPTL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRD3P130SPTL1
ROHM Semicon · MOSFETs · TO-252
RD3P130SPTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated at VGSS ±20 V with a gate threshold of -1.0 to -2.5 V at VDS = -10 V, ID = -1 mA, and protected by an internal ESD protection diode. |
| 2 | Drain | passive | Drain terminal (also the tab) with VDSS of -100 V and continuous drain current ID of ±13 A, with a body diode to the source. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, with body diode continuous forward current IS of -13 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -100 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -13 | 13 | A | Printed as ±13 A; limited only by maximum temperature allowed (*1) | 1 | |
| Pulsed drain current | IDP | -52 | 52 | A | Printed as ±52 A; Pw≦10μs, Duty cycle≦1% (*2) | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | Printed as ±20 V | 1 | |
| Power dissipation | PD | 20 | W | TC=25℃ (*3) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 6.25 | ℃/W | TC=25℃ (*3) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | -100 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -100V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | Printed as ±10 μA; VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = -10V, ID = -1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 135 | 200 | mΩ | VGS = -10V, ID = -6.5A; pulsed (*4) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 150 | 220 | mΩ | VGS = -4.5V, ID = -6.5A; pulsed (*4) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 155 | 230 | mΩ | VGS = -4.0V, ID = -6.5A; pulsed (*4) | 2 | |
| Forward Transfer Admittance | /Yfs/ | 10 | S | VDS = -10V, ID = -13A; pulsed (*4) | 2 | ||
| Continuous forward current | IS | -13 | A | Ta = 25℃ (*1) | 3 | ||
| Pulse forward current | ISP | -52 | A | (*2) Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -13A; pulsed (*4) | 3 |
CAD (KiCad official)
- Symbol:
RD3P130SPTL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3p130sptl1-etched.step/rd3p130sptl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3p130sptl1.step/rd3p130sptl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (15 pp, sha256
b9c96dc452dcc991, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).