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RD3P130SPTL1

Public Made by Adom

by adom

ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RD3P130SPTL1

ROHM Semicon · MOSFETs · TO-252

RD3P130SPTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, rated at VGSS ±20 V with a gate threshold of -1.0 to -2.5 V at VDS = -10 V, ID = -1 mA, and protected by an internal ESD protection diode.
2 Drain passive Drain terminal (also the tab) with VDSS of -100 V and continuous drain current ID of ±13 A, with a body diode to the source.
3 Source passive Source terminal of the P-channel MOSFET, with body diode continuous forward current IS of -13 A.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -100 V Ta = 25°C 1
Continuous drain current ID -13 13 A Printed as ±13 A; limited only by maximum temperature allowed (*1) 1
Pulsed drain current IDP -52 52 A Printed as ±52 A; Pw≦10μs, Duty cycle≦1% (*2) 1
Gate - Source voltage VGSS -20 20 V Printed as ±20 V 1
Power dissipation PD 20 W TC=25℃ (*3) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - case RthJC 6.25 ℃/W TC=25℃ (*3) 2
Drain - Source breakdown voltage V(BR)DSS -100 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -100V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA Printed as ±10 μA; VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) -1 -2.5 V VDS = -10V, ID = -1mA 2
Static drain - source on - state resistance RDS(on) 135 200 mΩ VGS = -10V, ID = -6.5A; pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 150 220 mΩ VGS = -4.5V, ID = -6.5A; pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 155 230 mΩ VGS = -4.0V, ID = -6.5A; pulsed (*4) 2
Forward Transfer Admittance /Yfs/ 10 S VDS = -10V, ID = -13A; pulsed (*4) 2
Continuous forward current IS -13 A Ta = 25℃ (*1) 3
Pulse forward current ISP -52 A (*2) Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD -1.2 V VGS = 0V, IS = -13A; pulsed (*4) 3

CAD (KiCad official)

  • Symbol: RD3P130SPTL1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rd3p130sptl1-etched.step / rd3p130sptl1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rd3p130sptl1.step / rd3p130sptl1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (15 pp, sha256 b9c96dc452dcc991, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF