component
IPD025N06NATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIPD025N06NATMA1
Infineon Technologies · MOSFETs · TO-252
IPD025N06NATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel normal-level MOSFET; the maximum rating for gate-source voltage VGS is -20 V to 20 V. |
| 2 | Drain | passive | Drain terminal, also connected to the tab; rated for VDS of 60 V and continuous ID of 90 A at TC=25°C with VGS=10 V. |
| 3 | Source | passive | Source terminal of the MOSFET, with the drain-source on-state resistance RDS(on) max of 2.5 mΩ at VGS=10 V and ID=90 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 90 | A | VGS=10V, TC=25°C | 4 | ||
| Continuous drain current | ID | 26 | A | VGS=10V, TC=25°C, RthJA=50K/W | 4 | ||
| Pulsed drain current | ID,pulse | 360 | A | TC=25°C | 4 | ||
| Avalanche energy, single pulse | EAS | 210 | mJ | ID=90A, RGS=25Ω | 4 | ||
| Gate source voltage | VGS | -20 | 20 | V | 4 | ||
| Power dissipation | Ptot | 167 | W | TC=25°C | 4 | ||
| Power dissipation | Ptot | 3 | W | TA=25°C, RthJA=50K/W | 4 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 4 | |
| Thermal resistance, junction - case | RthJC | 0.5 | 0.9 | K/W | 4 | ||
| Thermal resistance, junction - ambient, device on PCB minimal footprint | RthJA | 62 | K/W | Device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient, device on PCB 6 cm² cooling area | RthJA | 40 | K/W | Device on PCB, 6 cm² cooling area | 4 | ||
| Soldering temperature, wave and reflow soldering | Tsold | 260 | °C | Reflow MSL1 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=1mA | 5 | ||
| Gate threshold voltage | VGS(th) | 2.1 | 2.8 | 3.3 | V | VDS=VGS, ID=95µA | 5 |
| Zero gate voltage drain current | IDSS | 0.5 | 1 | µA | VDS=60V, VGS=0V, Tj=25°C | 5 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=60V, VGS=0V, Tj=125°C | 5 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V, VDS=0V | 5 | |
| Drain-source on-state resistance | RDS(on) | 2.1 | 2.5 | mΩ | VGS=10V, ID=90A | 5 | |
| Drain-source on-state resistance | RDS(on) | 2.7 | 3.8 | mΩ | VGS=6V, ID=22.5A | 5 | |
| Gate resistance | RG | 1.7 | 2.6 | Ω | 5 | ||
| Transconductance | gfs | 80 | 160 | S | /VDS/>2/ID/RDS(on)max, ID=90A | 5 | |
| Input capacitance | Ciss | 5200 | 6500 | pF | VGS=0V, VDS=30V, f=1MHz | 5 | |
| Output capacitance | Coss | 1200 | 1500 | pF | VGS=0V, VDS=30V, f=1MHz | 5 | |
| Reverse transfer capacitance | Crss | 48 | 96 | pF | VGS=0V, VDS=30V, f=1MHz | 5 | |
| Gate to drain charge | Qgd | 13 | 17 | nC | VDD=30V, ID=90A, VGS=0 to 10V | 6 | |
| Gate charge total | Qg | 71 | 83 | nC | VDD=30V, ID=90A, VGS=0 to 10V | 6 | |
| Output charge | Qoss | 81 | 102 | nC | VDD=30V, VGS=0V | 6 | |
| Diode continuous forward current | IS | 90 | A | TC=25°C | 6 | ||
| Diode pulse current | IS,pulse | 360 | A | TC=25°C | 6 | ||
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0V, IF=90A, Tj=25°C | 6 | |
| Reverse recovery time | trr | 83 | 133 | ns | VR=30V, IF=IS, diF/dt=100A/µs | 6 | |
| Reverse recovery charge | Qrr | 105 | nC | VR=30V, IF=IS, diF/dt=100A/µs | 6 | ||
| Gate to source charge | Qgs | 24 | nC | VDD=30V, ID=90A, VGS=0 to 10V | 6 | ||
| Gate charge at threshold | Qg(th) | 14 | nC | VDD=30V, ID=90A, VGS=0 to 10V | 6 | ||
| Switching charge | Qsw | 23 | nC | VDD=30V, ID=90A, VGS=0 to 10V | 6 | ||
| Gate plateau voltage | Vplateau | 4.7 | V | VDD=30V, ID=90A, VGS=0 to 10V | 6 | ||
| Gate charge total, sync. FET | Qg(sync) | 62 | nC | VDS=0.1V, VGS=0 to 10V | 6 | ||
| Turn-on delay time | td(on) | 16 | ns | VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω | 5 | ||
| Rise time | tr | 20 | ns | VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω | 5 | ||
| Turn-off delay time | td(off) | 34 | ns | VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω | 5 | ||
| Fall time | tf | 12 | ns | VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω | 5 |
CAD (KiCad official)
- Symbol:
IPD025N06NATMA1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd025n06natma1-etched.step/ipd025n06natma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd025n06natma1.step/ipd025n06natma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
1a544cc64f813cbf, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).