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IPD025N06NATMA1

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD025N06NATMA1

Infineon Technologies · MOSFETs · TO-252

IPD025N06NATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel normal-level MOSFET; the maximum rating for gate-source voltage VGS is -20 V to 20 V.
2 Drain passive Drain terminal, also connected to the tab; rated for VDS of 60 V and continuous ID of 90 A at TC=25°C with VGS=10 V.
3 Source passive Source terminal of the MOSFET, with the drain-source on-state resistance RDS(on) max of 2.5 mΩ at VGS=10 V and ID=90 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 90 A VGS=10V, TC=25°C 4
Continuous drain current ID 26 A VGS=10V, TC=25°C, RthJA=50K/W 4
Pulsed drain current ID,pulse 360 A TC=25°C 4
Avalanche energy, single pulse EAS 210 mJ ID=90A, RGS=25Ω 4
Gate source voltage VGS -20 20 V 4
Power dissipation Ptot 167 W TC=25°C 4
Power dissipation Ptot 3 W TA=25°C, RthJA=50K/W 4
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 4
Thermal resistance, junction - case RthJC 0.5 0.9 K/W 4
Thermal resistance, junction - ambient, device on PCB minimal footprint RthJA 62 K/W Device on PCB, minimal footprint 4
Thermal resistance, junction - ambient, device on PCB 6 cm² cooling area RthJA 40 K/W Device on PCB, 6 cm² cooling area 4
Soldering temperature, wave and reflow soldering Tsold 260 °C Reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=1mA 5
Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS, ID=95µA 5
Zero gate voltage drain current IDSS 0.5 1 µA VDS=60V, VGS=0V, Tj=25°C 5
Zero gate voltage drain current IDSS 10 100 µA VDS=60V, VGS=0V, Tj=125°C 5
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 2.1 2.5 mΩ VGS=10V, ID=90A 5
Drain-source on-state resistance RDS(on) 2.7 3.8 mΩ VGS=6V, ID=22.5A 5
Gate resistance RG 1.7 2.6 Ω 5
Transconductance gfs 80 160 S /VDS/>2/ID/RDS(on)max, ID=90A 5
Input capacitance Ciss 5200 6500 pF VGS=0V, VDS=30V, f=1MHz 5
Output capacitance Coss 1200 1500 pF VGS=0V, VDS=30V, f=1MHz 5
Reverse transfer capacitance Crss 48 96 pF VGS=0V, VDS=30V, f=1MHz 5
Gate to drain charge Qgd 13 17 nC VDD=30V, ID=90A, VGS=0 to 10V 6
Gate charge total Qg 71 83 nC VDD=30V, ID=90A, VGS=0 to 10V 6
Output charge Qoss 81 102 nC VDD=30V, VGS=0V 6
Diode continuous forward current IS 90 A TC=25°C 6
Diode pulse current IS,pulse 360 A TC=25°C 6
Diode forward voltage VSD 1 1.2 V VGS=0V, IF=90A, Tj=25°C 6
Reverse recovery time trr 83 133 ns VR=30V, IF=IS, diF/dt=100A/µs 6
Reverse recovery charge Qrr 105 nC VR=30V, IF=IS, diF/dt=100A/µs 6
Gate to source charge Qgs 24 nC VDD=30V, ID=90A, VGS=0 to 10V 6
Gate charge at threshold Qg(th) 14 nC VDD=30V, ID=90A, VGS=0 to 10V 6
Switching charge Qsw 23 nC VDD=30V, ID=90A, VGS=0 to 10V 6
Gate plateau voltage Vplateau 4.7 V VDD=30V, ID=90A, VGS=0 to 10V 6
Gate charge total, sync. FET Qg(sync) 62 nC VDS=0.1V, VGS=0 to 10V 6
Turn-on delay time td(on) 16 ns VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω 5
Rise time tr 20 ns VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω 5
Turn-off delay time td(off) 34 ns VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω 5
Fall time tf 12 ns VDD=30V, VGS=10V, ID=90A, RG,ext=1.6Ω 5

CAD (KiCad official)

  • Symbol: IPD025N06NATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd025n06natma1-etched.step / ipd025n06natma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd025n06natma1.step / ipd025n06natma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 1a544cc64f813cbf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF