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4N65L-ML-TF3-T
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4N65L-ML-TF3-T
UTC(Unisonic Tech) · MOSFETs · TO-220F
4N65L-ML-TF3-T from UTC(Unisonic Tech), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 4N65-ML N-channel power MOSFET, per the datasheet pin assignment (G: Gate). |
| 2 | D | passive | Drain terminal of the 4N65-ML N-channel power MOSFET, per the datasheet pin assignment (D: Drain). |
| 3 | S | passive | Source terminal of the 4N65-ML N-channel power MOSFET, per the datasheet pin assignment (S: Source). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Continuous Drain Current | ID | 4 | A | 3 | |||
| Pulsed Drain Current | IDM | 8 | A | 3 | |||
| Avalanche Energy Single Pulsed | EAS | 173 | mJ | 3 | |||
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | 3 | |||
| Power Dissipation TO-220F/TO-220F1/TO-220F2/TO-220F3 | PD | 32 | W | 3 | |||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 4 | |
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 2.6 | Ω | VGS=10V, ID=2.0A | 4 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=4A, VGS=0V | 4 | ||
| Maximum Body-Diode Continuous Current | IS | 4 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | 4 | |||
| Reverse Recovery Time | trr | 250 | ns | IS=4A, VGS=0V, di/dt=100A/μs | 4 | ||
| Reverse Recovery Charge | Qrr | 4.5 | μC | 4 | |||
| Input Capacitance | CISS | 560 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | ||
| Output Capacitance | COSS | 55 | pF | 4 | |||
| Reverse Transfer Capacitance | CRSS | 5 | pF | 4 | |||
| Total Gate Charge | QG | 13 | nC | VDS=520V, VGS=10V, ID=4A, IG=1mA | 4 | ||
| Gate-Source Charge | QGS | 4 | nC | 4 | |||
| Gate-Drain Charge | QGD | 2.2 | nC | 4 | |||
| Turn-On Delay Time | tD(ON) | 7 | ns | VDS=100V, VGS=10V, ID=4A, RG=25Ω | 4 | ||
| Turn-On Rise Time | tR | 16 | ns | 4 | |||
| Turn-Off Delay Time | tD(OFF) | 36 | ns | 4 | |||
| Turn-Off Fall Time | tF | 22 | ns | 4 | |||
| Junction to Ambient TO-220F/TO-220F1/TO-220F2/TO-220F3 | θJA | 62.5 | °C/W | 3 | |||
| Junction to Case TO-220F/TO-220F1/TO-220F2/TO-220F3 | θJC | 3.9 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
4N65L-ML-TF3-T - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
73a2e8da7d796568, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).