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Contents

README

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4N65L-ML-TF3-T

UTC(Unisonic Tech) · MOSFETs · TO-220F

4N65L-ML-TF3-T from UTC(Unisonic Tech), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the 4N65-ML N-channel power MOSFET, per the datasheet pin assignment (G: Gate).
2 D passive Drain terminal of the 4N65-ML N-channel power MOSFET, per the datasheet pin assignment (D: Drain).
3 S passive Source terminal of the 4N65-ML N-channel power MOSFET, per the datasheet pin assignment (S: Source).

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 3
Gate-Source Voltage VGSS -30 30 V 3
Continuous Drain Current ID 4 A 3
Pulsed Drain Current IDM 8 A 3
Avalanche Energy Single Pulsed EAS 173 mJ 3
Peak Diode Recovery dv/dt dv/dt 2.1 V/ns 3
Power Dissipation TO-220F/TO-220F1/TO-220F2/TO-220F3 PD 32 W 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250μA 4
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS=650V, VGS=0V 4
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 4
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 4
Static Drain-Source On-State Resistance RDS(ON) 2.6 Ω VGS=10V, ID=2.0A 4
Drain-Source Diode Forward Voltage VSD 1.4 V IS=4A, VGS=0V 4
Maximum Body-Diode Continuous Current IS 4 A 4
Maximum Body-Diode Pulsed Current ISM 8 A 4
Reverse Recovery Time trr 250 ns IS=4A, VGS=0V, di/dt=100A/μs 4
Reverse Recovery Charge Qrr 4.5 μC 4
Input Capacitance CISS 560 pF VDS=25V, VGS=0V, f=1.0MHz 4
Output Capacitance COSS 55 pF 4
Reverse Transfer Capacitance CRSS 5 pF 4
Total Gate Charge QG 13 nC VDS=520V, VGS=10V, ID=4A, IG=1mA 4
Gate-Source Charge QGS 4 nC 4
Gate-Drain Charge QGD 2.2 nC 4
Turn-On Delay Time tD(ON) 7 ns VDS=100V, VGS=10V, ID=4A, RG=25Ω 4
Turn-On Rise Time tR 16 ns 4
Turn-Off Delay Time tD(OFF) 36 ns 4
Turn-Off Fall Time tF 22 ns 4
Junction to Ambient TO-220F/TO-220F1/TO-220F2/TO-220F3 θJA 62.5 °C/W 3
Junction to Case TO-220F/TO-220F1/TO-220F2/TO-220F3 θJC 3.9 °C/W 3

CAD (KiCad official)

  • Symbol: 4N65L-ML-TF3-T
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256 73a2e8da7d796568, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF