component
STC4614
Public Made by Adomby adom
STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSTC4614
STANSON Tech · MOSFETs · SOP-8
STC4614 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 10.0A continuous at TA=25℃). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with gate-source voltage limited to ±20V and threshold of 1.0V min to 3.0V max. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -10.0A continuous at TA=25℃). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±20V and threshold of -1.0V to -3.0V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -40V (pins 5 and 6 are both D2). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -40V (pins 5 and 6 are both D2). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage of 40V (pins 7 and 8 are both D1). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage of 40V (pins 7 and 8 are both D1). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDSS | 40 | V | 2 | |||
| Drain-Source Voltage (P-channel) | VDSS | -40 | V | 2 | |||
| Gate-Source Voltage (N-channel) | VGSS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage (P-channel) | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-channel) | ID | 10 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current (N-channel) | ID | 7 | A | TJ=150℃, TA=70℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -10 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -6 | A | TJ=150℃, TA=70℃ | 2 | ||
| Pulsed Drain Current (N-channel) | IDM | 20 | A | 2 | |||
| Pulsed Drain Current (P-channel) | IDM | -20 | A | 2 | |||
| Continuous Source Current (N-channel) | IS | 2.5 | A | Diode conduction | 2 | ||
| Continuous Source Current (P-channel) | IS | -2.5 | A | Diode conduction | 2 | ||
| Power Dissipation | PD | 2.5 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 1.8 | W | TA=70℃ | 2 | ||
| Operation Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | ℃/W | T10Sec | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 110 | ℃/W | Steady state | 2 | ||
| Drain-Source Breakdown Voltage (N-channel) | V(BR)DSS | 40 | V | VGS=0V, ID=10mA | 3 | ||
| Drain-Source Breakdown Voltage (P-channel) | V(BR)DSS | -40 | V | VGS=0V, ID=-10mA | 3 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250 uA | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 3 | |
| Gate Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | uA | TJ=55℃, VDS=32V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | uA | TJ=55℃, VDS=-32V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | uA | VDS=32V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | uA | VDS=-32V, VGS=0V | 3 | ||
| On-State Drain Current (N-channel) | ID(on) | 20 | A | VDS≧5V, VGS=10V | 3 | ||
| On-State Drain Current (P-channel) | ID(on) | -20 | A | VDS-5V, VGS=-10V | 3 | ||
| Diode Forward Voltage (N-channel) | VSD | 1.2 | V | IS=1.0A, VGS=0V | 3 | ||
| Diode Forward Voltage (P-channel) | VSD | -1.2 | V | IS=-1.7A, VGS=0V | 3 | ||
| Total Gate Charge (N-channel) | Qg | 8.3 | 10 | nC | VDS=20V, VGS=10V, ID≡6.0A | 3 | |
| Total Gate Charge (P-channel) | Qg | 13.6 | 15 | nC | VDS=-20V, VGS=-10V, ID≡-5.0A | 3 | |
| Gate-Source Charge (N-channel) | Qgs | 1.3 | 2 | nC | VDS=20V, VGS=10V, ID≡6.0A | 3 | |
| Gate-Source Charge (P-channel) | Qgs | 1.8 | 2.5 | nC | VDS=-20V, VGS=-10V, ID≡-5.0A | 3 | |
| Gate-Drain Charge (N-channel) | Qgd | 2.3 | 3 | nC | VDS=20V, VGS=10V, ID≡6.0A | 3 | |
| Gate-Drain Charge (P-channel) | Qgd | 4 | 5 | nC | VDS=-20V, VGS=-10V, ID≡-5.0A | 3 | |
| Turn-On Delay Time td(on) (N-channel) | td(on) | 4.6 | 6 | nS | VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω | 3 | |
| Turn-On Delay Time td(on) (P-channel) | td(on) | 7.7 | 11.5 | nS | VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω | 3 | |
| Turn-On Rise Time tr (N-channel) | tr | 3.1 | 4 | nS | VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω | 3 | |
| Turn-On Rise Time tr (P-channel) | tr | 6.7 | 9 | nS | VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω | 3 | |
| Turn-Off Delay Time td(off) (N-channel) | td(off) | 15.6 | 21 | nS | VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω | 3 | |
| Turn-Off Delay Time td(off) (P-channel) | td(off) | 26.2 | 34 | nS | VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω | 3 | |
| Turn-Off Fall Time tf (N-channel) | tf | 3 | 4 | nS | VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω | 3 | |
| Turn-Off Fall Time tf (P-channel) | tf | 11.2 | 15 | nS | VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω | 3 |
CAD (KiCad official)
- Symbol:
STC4614 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stc4614-etched.step/stc4614-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stc4614.step/stc4614.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (10 pp, sha256
0abc5a4482e32b6e, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).