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STC4614

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STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STC4614

STANSON Tech · MOSFETs · SOP-8

STC4614 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (40V, 10.0A continuous at TA=25℃).
2 G1 input Gate of the N-channel MOSFET, with gate-source voltage limited to ±20V and threshold of 1.0V min to 3.0V max.
3 S2 passive Source of the P-channel MOSFET (-40V, -10.0A continuous at TA=25℃).
4 G2 input Gate of the P-channel MOSFET, with gate-source voltage limited to ±20V and threshold of -1.0V to -3.0V.
5 D2 passive Drain of the P-channel MOSFET, rated for a drain-source voltage of -40V (pins 5 and 6 are both D2).
6 D2 passive Drain of the P-channel MOSFET, rated for a drain-source voltage of -40V (pins 5 and 6 are both D2).
7 D1 passive Drain of the N-channel MOSFET, rated for a drain-source voltage of 40V (pins 7 and 8 are both D1).
8 D1 passive Drain of the N-channel MOSFET, rated for a drain-source voltage of 40V (pins 7 and 8 are both D1).

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDSS 40 V 2
Drain-Source Voltage (P-channel) VDSS -40 V 2
Gate-Source Voltage (N-channel) VGSS -20 20 V 2
Gate-Source Voltage (P-channel) VGSS -20 20 V 2
Continuous Drain Current (N-channel) ID 10 A TJ=150℃, TA=25℃ 2
Continuous Drain Current (N-channel) ID 7 A TJ=150℃, TA=70℃ 2
Continuous Drain Current (P-channel) ID -10 A TJ=150℃, TA=25℃ 2
Continuous Drain Current (P-channel) ID -6 A TJ=150℃, TA=70℃ 2
Pulsed Drain Current (N-channel) IDM 20 A 2
Pulsed Drain Current (P-channel) IDM -20 A 2
Continuous Source Current (N-channel) IS 2.5 A Diode conduction 2
Continuous Source Current (P-channel) IS -2.5 A Diode conduction 2
Power Dissipation PD 2.5 W TA=25℃ 2
Power Dissipation PD 1.8 W TA=70℃ 2
Operation Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance Junction to Ambient RθJA 62.5 ℃/W T10Sec 2
Thermal Resistance Junction to Ambient RθJA 110 ℃/W Steady state 2
Drain-Source Breakdown Voltage (N-channel) V(BR)DSS 40 V VGS=0V, ID=10mA 3
Drain-Source Breakdown Voltage (P-channel) V(BR)DSS -40 V VGS=0V, ID=-10mA 3
Gate Threshold Voltage (N-channel) VGS(th) 1 3 V VDS=VGS, ID=250 uA 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -3 V VDS=VGS, ID=-250uA 3
Gate Leakage Current (N-channel) IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Leakage Current (P-channel) IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 1 uA TJ=55℃, VDS=32V, VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -1 uA TJ=55℃, VDS=-32V, VGS=0V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 5 uA VDS=32V, VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -5 uA VDS=-32V, VGS=0V 3
On-State Drain Current (N-channel) ID(on) 20 A VDS≧5V, VGS=10V 3
On-State Drain Current (P-channel) ID(on) -20 A VDS-5V, VGS=-10V 3
Diode Forward Voltage (N-channel) VSD 1.2 V IS=1.0A, VGS=0V 3
Diode Forward Voltage (P-channel) VSD -1.2 V IS=-1.7A, VGS=0V 3
Total Gate Charge (N-channel) Qg 8.3 10 nC VDS=20V, VGS=10V, ID≡6.0A 3
Total Gate Charge (P-channel) Qg 13.6 15 nC VDS=-20V, VGS=-10V, ID≡-5.0A 3
Gate-Source Charge (N-channel) Qgs 1.3 2 nC VDS=20V, VGS=10V, ID≡6.0A 3
Gate-Source Charge (P-channel) Qgs 1.8 2.5 nC VDS=-20V, VGS=-10V, ID≡-5.0A 3
Gate-Drain Charge (N-channel) Qgd 2.3 3 nC VDS=20V, VGS=10V, ID≡6.0A 3
Gate-Drain Charge (P-channel) Qgd 4 5 nC VDS=-20V, VGS=-10V, ID≡-5.0A 3
Turn-On Delay Time td(on) (N-channel) td(on) 4.6 6 nS VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω 3
Turn-On Delay Time td(on) (P-channel) td(on) 7.7 11.5 nS VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω 3
Turn-On Rise Time tr (N-channel) tr 3.1 4 nS VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω 3
Turn-On Rise Time tr (P-channel) tr 6.7 9 nS VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω 3
Turn-Off Delay Time td(off) (N-channel) td(off) 15.6 21 nS VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω 3
Turn-Off Delay Time td(off) (P-channel) td(off) 26.2 34 nS VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω 3
Turn-Off Fall Time tf (N-channel) tf 3 4 nS VDS=20V, RL=3.3Ω, ID=1A, RGEN=3Ω 3
Turn-Off Fall Time tf (P-channel) tf 11.2 15 nS VDS=-20V, RL=4.0Ω, ID=-1A, RGEN=-3Ω 3

CAD (KiCad official)

  • Symbol: STC4614
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stc4614-etched.step / stc4614-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stc4614.step / stc4614.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (10 pp, sha256 0abc5a4482e32b6e, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF