component
IR2085STRPbF
Public Made by Adomby adom
Infineon Technologies Gate Drivers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIR2085STRPbF
Infineon Technologies · Gate Drivers · SOIC-8
IR2085STRPbF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | Low-side logic supply input, recommended 10 V to 15 V, with undervoltage lockout (UVCC+ 6.8-7.8 V, UVCC- 6.3-7.3 V) and a bypass ceramic capacitor to COM placed close to the device. |
| 2 | OSC | passive | Oscillator programming pin: RT connects from VCC to OSC and CT from OSC to COM, with fOSC = 1/(2·RT·CT), RT recommended 10 kΩ to 100 kΩ and CT recommended 47 pF to 470 pF, and RT below 10 kΩ should be avoided. |
| 3 | CS | input | Current sense input to the overcurrent comparator; exceeding the overcurrent threshold (VCS+ 250-350 mV) terminates the output pulses and starts a new soft-start cycle once the voltage falls back below the threshold. |
| 4 | GND | power_in | Logic supply return and signal/power ground for all functions (called COM in the pin descriptions), where a low-impedance ground plane is highly recommended due to high current and high frequency operation. |
| 5 | LO | output | Low-side gate drive output that can directly drive a power MOSFET gate with 1 A peak source and sink current, and should be placed very close to the low-side MOSFET gate. |
| 6 | VS | power_in | High-side floating supply return, to be connected directly to the high-side MOSFET source with the shortest possible trace; steady-state offset range is -5 V to 100 V, and the Vs node should not fly inductively below ground by more than 5 V. |
| 7 | HO | output | High-side gate drive output that can directly drive a power MOSFET gate with 1 A peak source and sink current, and should be placed very close to the high-side MOSFET gate. |
| 8 | Vb | power_in | High-side floating supply input, derived from a bootstrap circuit using a low-leakage Schottky diode and ceramic capacitor, with recommended Vb of up to 15 V and an absolute maximum of 150 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-8 |
| Category | Motor Driver ICs |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
IR2085STRPbF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ir2085strpbf-etched.step/ir2085strpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ir2085strpbf.step/ir2085strpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
5c9e26e854a1cb2b, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).