component
HMMDT54017F
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHMMDT54017F
HXY MOSFET · Bipolar (BJT) · SOT-363
HMMDT54017F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of PNP transistor 1; VEBO limit is -5 V. |
| 2 | B1 | input | Base of PNP transistor 1; emitter-base voltage limit is -5 V. |
| 3 | C2 | passive | Collector of PNP transistor 2; VCBO -160 V, VCEO -150 V, IC -200 mA maximum. |
| 4 | E2 | passive | Emitter of PNP transistor 2; VEBO limit is -5 V. |
| 5 | B2 | input | Base of PNP transistor 2; emitter-base voltage limit is -5 V. |
| 6 | C1 | passive | Collector of PNP transistor 1; VCBO -160 V, VCEO -150 V, IC -200 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -160 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -150 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -200 | mA | 1 | |||
| Collector Power Dissipation | PC | 200 | mW | 1 | |||
| Thermal Resistance From Junction To Ambient | RΘJA | 625 | ℃/W | 1 | |||
| Operation Junction And Storage Temperature Range | TJ ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -160 | V | IC=-100μA , IE= | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -150 | V | IC= -1mA , IB= | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10μA, IC= | 1 | ||
| Collector cut-off current | ICBO | -0.05 | μA | VCB=-120 V ,IE= | 1 | ||
| Emitter cut-off current | IEBO | -0.05 | μA | VEB=-3V ,IC= | 1 | ||
| DC current gain hFE(1) | hFE(1) | 50 | VCE=-5 V,IC = -1mA | 1 | |||
| DC current gain hFE(2) | hFE(2) | 100 | 300 | VCE=-5 V,IC= -10mA | 1 | ||
| DC current gain hFE(3) | hFE(3) | 50 | VCE=-5 V,IC= -50mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | -0.2 | V | IC=-10 mA, IB= | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | -0.5 | V | IC=-50 mA, IB= | 1 | ||
| Base-emitter saturation voltage | VBE(sat)1 | -1 | V | IC= -10 mA, IB= | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE= -10V, IC= -10mA,f = 100MHz | 1 | ||
| Output Capacitance | Cob | 6 | pF | VCB=-10V, IE= 0,f=1MHz | 1 | ||
| Noise Figure | NF | 8 | dB | VCE= -5.0V, IC= -200μA, RS= 10Ω,f = 1.0kHz | 1 |
CAD (KiCad official)
- Symbol:
HMMDT54017F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
hmmdt54017f-etched.step/hmmdt54017f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hmmdt54017f.step/hmmdt54017f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
0aed62f62d339b13, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).