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HMMDT54017F

HXY MOSFET · Bipolar (BJT) · SOT-363

HMMDT54017F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of PNP transistor 1; VEBO limit is -5 V.
2 B1 input Base of PNP transistor 1; emitter-base voltage limit is -5 V.
3 C2 passive Collector of PNP transistor 2; VCBO -160 V, VCEO -150 V, IC -200 mA maximum.
4 E2 passive Emitter of PNP transistor 2; VEBO limit is -5 V.
5 B2 input Base of PNP transistor 2; emitter-base voltage limit is -5 V.
6 C1 passive Collector of PNP transistor 1; VCBO -160 V, VCEO -150 V, IC -200 mA maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -160 V 1
Collector-Emitter Voltage VCEO -150 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -200 mA 1
Collector Power Dissipation PC 200 mW 1
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 1
Operation Junction And Storage Temperature Range TJ ,Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO -160 V IC=-100μA , IE= 1
Collector-emitter breakdown voltage V(BR)CEO -150 V IC= -1mA , IB= 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA, IC= 1
Collector cut-off current ICBO -0.05 μA VCB=-120 V ,IE= 1
Emitter cut-off current IEBO -0.05 μA VEB=-3V ,IC= 1
DC current gain hFE(1) hFE(1) 50 VCE=-5 V,IC = -1mA 1
DC current gain hFE(2) hFE(2) 100 300 VCE=-5 V,IC= -10mA 1
DC current gain hFE(3) hFE(3) 50 VCE=-5 V,IC= -50mA 1
Collector-emitter saturation voltage VCE(sat)1 -0.2 V IC=-10 mA, IB= 1
Collector-emitter saturation voltage VCE(sat)2 -0.5 V IC=-50 mA, IB= 1
Base-emitter saturation voltage VBE(sat)1 -1 V IC= -10 mA, IB= 1
Transition frequency fT 100 MHz VCE= -10V, IC= -10mA,f = 100MHz 1
Output Capacitance Cob 6 pF VCB=-10V, IE= 0,f=1MHz 1
Noise Figure NF 8 dB VCE= -5.0V, IC= -200μA, RS= 10Ω,f = 1.0kHz 1

CAD (KiCad official)

  • Symbol: HMMDT54017F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: hmmdt54017f-etched.step / hmmdt54017f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmmdt54017f.step / hmmdt54017f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 0aed62f62d339b13, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF