# HMMDT54017F

**HXY MOSFET** · Bipolar (BJT) · SOT-363

HMMDT54017F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of PNP transistor 1; VEBO limit is -5 V. |
| 2 | B1 | input | Base of PNP transistor 1; emitter-base voltage limit is -5 V. |
| 3 | C2 | passive | Collector of PNP transistor 2; VCBO -160 V, VCEO -150 V, IC -200 mA maximum. |
| 4 | E2 | passive | Emitter of PNP transistor 2; VEBO limit is -5 V. |
| 5 | B2 | input | Base of PNP transistor 2; emitter-base voltage limit is -5 V. |
| 6 | C1 | passive | Collector of PNP transistor 1; VCBO -160 V, VCEO -150 V, IC -200 mA maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | -160 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -150 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V |  | 1 |
| Collector Current | IC |  |  | -200 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 200 | mW |  | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  |  | 625 | ℃/W |  | 1 |
| Operation Junction And Storage Temperature Range | TJ ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -160 |  |  | V | IC=-100μA , IE= | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -150 |  |  | V | IC= -1mA , IB= | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-10μA, IC= | 1 |
| Collector cut-off current | ICBO |  |  | -0.05 | μA | VCB=-120 V ,IE= | 1 |
| Emitter cut-off current | IEBO |  |  | -0.05 | μA | VEB=-3V ,IC= | 1 |
| DC current gain hFE(1) | hFE(1) | 50 |  |  |  | VCE=-5 V,IC = -1mA | 1 |
| DC current gain hFE(2) | hFE(2) | 100 |  | 300 |  | VCE=-5 V,IC= -10mA | 1 |
| DC current gain hFE(3) | hFE(3) | 50 |  |  |  | VCE=-5 V,IC= -50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)1 |  |  | -0.2 | V | IC=-10 mA, IB= | 1 |
| Collector-emitter saturation voltage | VCE(sat)2 |  |  | -0.5 | V | IC=-50 mA, IB= | 1 |
| Base-emitter saturation voltage | VBE(sat)1 |  |  | -1 | V | IC= -10 mA, IB= | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE= -10V, IC= -10mA,f = 100MHz | 1 |
| Output Capacitance | Cob |  |  | 6 | pF | VCB=-10V, IE= 0,f=1MHz | 1 |
| Noise Figure | NF |  |  | 8 | dB | VCE= -5.0V, IC= -200μA, RS= 10Ω,f = 1.0kHz | 1 |

## CAD (KiCad official)

- Symbol: `HMMDT54017F`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `hmmdt54017f-etched.step` / `hmmdt54017f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hmmdt54017f.step` / `hmmdt54017f.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438501442002944) (4 pp, sha256 `0aed62f62d339b13`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hmmdt54017f-datasheet.pdf)