component
G1NP02LLE
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownG1NP02LLE
GOFORD · MOSFETs · SOT-23-6L
G1NP02LLE from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±10 V, ESD (HBM) >2.0 kV. |
| 2 | S2 | passive | Source of MOSFET 2; continuous drain current rated 1.3 A (NMOS) or -1.1 A (PMOS) per channel. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±10 V, ESD (HBM) >2.0 kV. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 20 V (NMOS) or -20 V (PMOS). |
| 5 | S1 | passive | Source of MOSFET 1; continuous drain current rated 1.3 A (NMOS) or -1.1 A (PMOS) per channel. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 20 V (NMOS) or -20 V (PMOS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NMOS Drain-Source Voltage | VDS | 20 | V | TC = 25ºC | 1 | ||
| PMOS Drain-Source Voltage | VDS | -20 | V | TC = 25ºC | 1 | ||
| NMOS Continuous Drain Current | ID | 1.3 | A | TC = 25ºC | 1 | ||
| PMOS Continuous Drain Current | ID | 1.1 | A | TC = 25ºC | 1 | ||
| NMOS Pulsed Drain Current | IDM | 5.2 | A | TC = 25ºC; note 1 repetitive rating, pulse width limited by max junction temperature | 1 | ||
| PMOS Pulsed Drain Current | IDM | 4.4 | A | TC = 25ºC; note 1 repetitive rating, pulse width limited by max junction temperature | 1 | ||
| NMOS Gate-Source Voltage | VGS | -10 | 10 | V | TC = 25ºC | 1 | |
| PMOS Gate-Source Voltage | VGS | -10 | 10 | V | TC = 25ºC | 1 | |
| NMOS Power Dissipation | PD | 1.25 | W | TC = 25ºC | 1 | ||
| PMOS Power Dissipation | PD | 1.25 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| NMOS Thermal Resistance, Junction-to-Ambient | RthJA | 100 | ºC/W | Junction-to-ambient | 1 | ||
| PMOS Thermal Resistance, Junction-to-Ambient | RthJA | 100 | ºC/W | Junction-to-ambient | 1 | ||
| NMOS Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| NMOS Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 20V, VGS = 0V | 2 | ||
| NMOS Gate-Source Leakage | IGSS | -10 | 10 | uA | VGS = ±10V | 2 | |
| NMOS Gate-Source Threshold Voltage | VGS(th) | 0.35 | 0.55 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| NMOS Drain-Source On-Resistance | RDS(on) | 170 | 210 | mΩ | VGS = 4.5V, ID = 0.65A | 2 | |
| NMOS Drain-Source On-Resistance | RDS(on) | 220 | 270 | mΩ | VGS = 2.5V, ID = 0.55A | 2 | |
| NMOS Drain-Source On-Resistance | RDS(on) | 300 | 360 | mΩ | VGS = 1.8V, ID = 0.45A | 2 | |
| NMOS Continuous Body Diode Current | IS | 1.3 | A | TC = 25ºC | 2 | ||
| NMOS Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 0.65A, VGS = 0V | 2 | ||
| PMOS Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250µA | 6 | ||
| PMOS Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -20V, VGS = 0V | 6 | ||
| PMOS Gate-Source Leakage | IGSS | -10 | 10 | uA | VGS = ±10V | 6 | |
| PMOS Gate-Source Threshold Voltage | VGS(th) | -0.35 | -0.55 | -0.8 | V | VDS = VGS, ID = -250µA | 6 |
| PMOS Drain-Source On-Resistance | RDS(on) | 380 | 460 | mΩ | VGS = -4.5V, ID = -0.5A | 6 | |
| PMOS Drain-Source On-Resistance | RDS(on) | 480 | 580 | mΩ | VGS = -2.5V, ID = -0.5A | 6 | |
| PMOS Drain-Source On-Resistance | RDS(on) | 630 | 760 | mΩ | VGS = -1.8V, ID = -0.5A | 6 | |
| PMOS Continuous Body Diode Current | IS | -1.1 | A | TC = 25ºC | 6 | ||
| PMOS Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -0.5A, VGS = 0V | 6 |
CAD (KiCad official)
- Symbol:
G1NP02LLE - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
g1np02lle-etched.step/g1np02lle-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g1np02lle.step/g1np02lle.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (10 pp, sha256
6223375c47de56da, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).