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G1NP02LLE

GOFORD · MOSFETs · SOT-23-6L

G1NP02LLE from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; gate-source voltage limited to ±10 V, ESD (HBM) >2.0 kV.
2 S2 passive Source of MOSFET 2; continuous drain current rated 1.3 A (NMOS) or -1.1 A (PMOS) per channel.
3 G2 input Gate of MOSFET 2; gate-source voltage limited to ±10 V, ESD (HBM) >2.0 kV.
4 D2 passive Drain of MOSFET 2; drain-source voltage rated 20 V (NMOS) or -20 V (PMOS).
5 S1 passive Source of MOSFET 1; continuous drain current rated 1.3 A (NMOS) or -1.1 A (PMOS) per channel.
6 D1 passive Drain of MOSFET 1; drain-source voltage rated 20 V (NMOS) or -20 V (PMOS).

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NMOS Drain-Source Voltage VDS 20 V TC = 25ºC 1
PMOS Drain-Source Voltage VDS -20 V TC = 25ºC 1
NMOS Continuous Drain Current ID 1.3 A TC = 25ºC 1
PMOS Continuous Drain Current ID 1.1 A TC = 25ºC 1
NMOS Pulsed Drain Current IDM 5.2 A TC = 25ºC; note 1 repetitive rating, pulse width limited by max junction temperature 1
PMOS Pulsed Drain Current IDM 4.4 A TC = 25ºC; note 1 repetitive rating, pulse width limited by max junction temperature 1
NMOS Gate-Source Voltage VGS -10 10 V TC = 25ºC 1
PMOS Gate-Source Voltage VGS -10 10 V TC = 25ºC 1
NMOS Power Dissipation PD 1.25 W TC = 25ºC 1
PMOS Power Dissipation PD 1.25 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
NMOS Thermal Resistance, Junction-to-Ambient RthJA 100 ºC/W Junction-to-ambient 1
PMOS Thermal Resistance, Junction-to-Ambient RthJA 100 ºC/W Junction-to-ambient 1
NMOS Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0V, ID = 250µA 2
NMOS Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V 2
NMOS Gate-Source Leakage IGSS -10 10 uA VGS = ±10V 2
NMOS Gate-Source Threshold Voltage VGS(th) 0.35 0.55 1 V VDS = VGS, ID = 250µA 2
NMOS Drain-Source On-Resistance RDS(on) 170 210 mΩ VGS = 4.5V, ID = 0.65A 2
NMOS Drain-Source On-Resistance RDS(on) 220 270 mΩ VGS = 2.5V, ID = 0.55A 2
NMOS Drain-Source On-Resistance RDS(on) 300 360 mΩ VGS = 1.8V, ID = 0.45A 2
NMOS Continuous Body Diode Current IS 1.3 A TC = 25ºC 2
NMOS Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 0.65A, VGS = 0V 2
PMOS Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0V, ID = -250µA 6
PMOS Zero Gate Voltage Drain Current IDSS -1 μA VDS = -20V, VGS = 0V 6
PMOS Gate-Source Leakage IGSS -10 10 uA VGS = ±10V 6
PMOS Gate-Source Threshold Voltage VGS(th) -0.35 -0.55 -0.8 V VDS = VGS, ID = -250µA 6
PMOS Drain-Source On-Resistance RDS(on) 380 460 mΩ VGS = -4.5V, ID = -0.5A 6
PMOS Drain-Source On-Resistance RDS(on) 480 580 mΩ VGS = -2.5V, ID = -0.5A 6
PMOS Drain-Source On-Resistance RDS(on) 630 760 mΩ VGS = -1.8V, ID = -0.5A 6
PMOS Continuous Body Diode Current IS -1.1 A TC = 25ºC 6
PMOS Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -0.5A, VGS = 0V 6

CAD (KiCad official)

  • Symbol: G1NP02LLE
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: g1np02lle-etched.step / g1np02lle-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g1np02lle.step / g1np02lle.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (10 pp, sha256 6223375c47de56da, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF