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CJU07N06

Public Made by Adom

by adom

Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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CJU07N06

Changjing · MOSFETs · TO-252-2L

CJU07N06 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input MOSFET gate terminal; the datasheet specifies gate-body leakage IGSS of ±100 nA max at VGS = ±20 V with VDS = 0 V.
2 DRAIN passive Drain terminal of the N-channel power MOSFET; the datasheet specifies a drain-source breakdown voltage V(BR)DSS of 60 V at VGS = 0 V, ID = 250 µA.
3 SOURCE passive Source terminal of the N-channel power MOSFET; the source-drain diode is rated at continuous forward current IS = 7.0 A and pulsed forward current ISM = 28 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 250uA 2
Zero gate voltage drain current IDSS 1 µA TJ = 25℃, VDS = 48V, VGS = 0V 2
Zero gate voltage drain current IDSS 100 µA TJ = 125℃, VDS = 48V, VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate-threshold voltage VGS(th) 0.5 1.2 2 V VDS = VGS, ID = 250uA 2
Static drain-source on-state resistance RDS(on) 77 100 mΩ VGS = 10V, ID = 3A 2
Static drain-source on-state resistance RDS(on) 88 120 mΩ VGS = 4.5V, ID = 3A 2
Input capacitance Ciss 308 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 22.6 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 20.2 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Gate resistance Rg 9.2 Ω f = 1MHz 2
Drain-source diode forward voltage VSD 1.2 V VGS = 0V, IS = 7A 2
Continuous drain-source diode forward current IS 7 A 2
Pulsed drain-source diode forward current ISM 28 A 2
Power dissipation PD 15 W 1
Operation junction and storage temperature range TJ, Tstg -55 150 ℃ 1
Thermal resistance from junction to case RθJC 8.3 ℃/W 1

CAD (KiCad official)

  • Symbol: CJU07N06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju07n06-etched.step / cju07n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju07n06.step / cju07n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 768ea4052bd95bf1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF