component
CJU07N06
Public Made by Adomby adom
Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| cju07n06-etched.glb | 17d ago |
| cju07n06-etched.step | 17d ago |
| cju07n06-hero.glb | 17d ago |
| cju07n06-hero.overlay.json | 17d ago |
| cju07n06.glb | 17d ago |
| cju07n06.kicad_mod | 17d ago |
| cju07n06.kicad_sym | 17d ago |
| cju07n06.lbr | 17d ago |
| cju07n06.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
CJU07N06
Changjing · MOSFETs · TO-252-2L
CJU07N06 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | MOSFET gate terminal; the datasheet specifies gate-body leakage IGSS of ±100 nA max at VGS = ±20 V with VDS = 0 V. |
| 2 | DRAIN | passive | Drain terminal of the N-channel power MOSFET; the datasheet specifies a drain-source breakdown voltage V(BR)DSS of 60 V at VGS = 0 V, ID = 250 µA. |
| 3 | SOURCE | passive | Source terminal of the N-channel power MOSFET; the source-drain diode is rated at continuous forward current IS = 7.0 A and pulsed forward current ISM = 28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250uA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | TJ = 25℃, VDS = 48V, VGS = 0V | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | TJ = 125℃, VDS = 48V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 0.5 | 1.2 | 2 | V | VDS = VGS, ID = 250uA | 2 |
| Static drain-source on-state resistance | RDS(on) | 77 | 100 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 88 | 120 | mΩ | VGS = 4.5V, ID = 3A | 2 | |
| Input capacitance | Ciss | 308 | pF | VDS = 30V, VGS = 0V, f = 1MHz | 2 | ||
| Output capacitance | Coss | 22.6 | pF | VDS = 30V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 20.2 | pF | VDS = 30V, VGS = 0V, f = 1MHz | 2 | ||
| Gate resistance | Rg | 9.2 | Ω | f = 1MHz | 2 | ||
| Drain-source diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 7A | 2 | ||
| Continuous drain-source diode forward current | IS | 7 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 28 | A | 2 | |||
| Power dissipation | PD | 15 | W | 1 | |||
| Operation junction and storage temperature range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to case | RθJC | 8.3 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CJU07N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
cju07n06-etched.step/cju07n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cju07n06.step/cju07n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
768ea4052bd95bf1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).