component
BSS214NWH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS214NWH6327
Infineon Technologies · MOSFETs · SOT-323
BSS214NWH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement-mode MOSFET, logic level rated for 2.5 V drive with a maximum gate-source voltage of ±12 V. |
| 2 | S | passive | Source of the N-channel MOSFET, shown at the bottom of the symbol with the body diode anode, and the continuous drain current is 1.5 A at TA=25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET with a 20 V drain-source breakdown voltage (minimum), 1.5 A continuous and 6 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate threshold voltage | V GS(th) | 0.7 | 0.95 | 1.2 | V | V DS=0 V, I D=3.7 µA | 2 |
| Drain-source on-state resistance | R DS(on) | 171 | 250 | mΩ | V GS=2.5 V, I D=0.7 A | 2 | |
| Drain-source on-state resistance | R DS(on) | 106 | 140 | mΩ | V GS=4.5 V, I D=1.5 A | 2 | |
| Gate-source leakage current | I GSS | 100 | nA | V GS=12 V, V DS=0 V | 2 | ||
| Drain-source leakage current | I DSS | 1 | μA | V DS=20 V, V GS=0 V, T j=25 °C | 2 | ||
| Drain-source leakage current | I DSS | 100 | µA | V DS=20 V, V GS=0 V, T j=150 °C | 2 | ||
| Drain-source breakdown voltage | V (BR)DSS | 20 | V | V GS= 0 V, I D= 250 µA | 2 | ||
| Transconductance | g fs | 4 | S | /V DS/>2/I D/R DS(on)max, I D=1.2 A | 2 | ||
| Input capacitance | C iss | 107 | 143 | pF | V GS=0 V, V DS=10 V, f=1 MHz | 3 | |
| Output capacitance | C oss | 46 | 62 | pF | V GS=0 V, V DS=10 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | C rss | 6 | pF | V GS=0 V, V DS=10 V, f=1 MHz | 3 | ||
| Turn-on delay time | t d(on) | 4.1 | ns | V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω | 3 | ||
| Rise time | t r | 7.8 | ns | V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω | 3 | ||
| Turn-off delay time | t d(off) | 6.8 | ns | V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω | 3 | ||
| Fall time | t f | 1.4 | ns | V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω | 3 | ||
| Gate to source charge | Q gs | 0.24 | nC | V DD=10 V, I D=1.5 A, V GS=0 to 5 V | 3 | ||
| Gate to drain charge | Q gd | 0.2 | nC | V DD=10 V, I D=1.5 A, V GS=0 to 5 V | 3 | ||
| Gate charge total | Q g | 0.8 | nC | V DD=10 V, I D=1.5 A, V GS=0 to 5 V | 3 | ||
| Gate plateau voltage | V plateau | 2.2 | V | V DD=10 V, I D=1.5 A, V GS=0 to 5 V | 3 | ||
| Diode continuous forward current | I S | 0.5 | A | 3 | |||
| Diode pulse current | I S,pulse | 6 | A | 3 | |||
| Diode forward voltage | V SD | 0.8 | 1.1 | V | V GS=0 V, I F=1.5 A, T j=25 °C | 3 | |
| Reverse recovery time | t rr | 8.4 | ns | V R=10 V, I F=1.5 A, di F/dt=100 A/µs, T A=25 °C | 3 | ||
| Reverse recovery charge | Q rr | 1.7 | nC | V R=10 V, I F=1.5 A, di F/dt=100 A/µs, T A=25 °C | 3 | ||
| Continuous drain current | I D | 1.5 | A | T A=25 °C | 1 | ||
| Continuous drain current | I D | 1.2 | A | T A=70 °C | 1 | ||
| Pulsed drain current | I D,pulse | 6 | A | T A=25 °C | 1 | ||
| Avalanche energy, single pulse | E AS | 3.7 | mJ | I D=1.5 A, R GS=25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | I D=1.5 A, V DS=16 V, di/dt=200 A/µs, T j,max=150 °C | 1 | ||
| Gate source voltage | V GS | -12 | 12 | V | 1 | ||
| Operating and storage temperature | T j, T stg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| ESD class HBM (JESD22-A114) | 250 | V | Class 0 (<250V), JESD22-A114 HBM | 1 | |||
| Thermal resistance, junction - ambient | R thJA | 250 | K/W | minimal footprint | 2 |
CAD (KiCad official)
- Symbol:
BSS214NWH6327 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bss214nwh6327-etched.step/bss214nwh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss214nwh6327.step/bss214nwh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
3ff58ee0a6003944, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).