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BSS214NWH6327

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Infineon Technologies MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS214NWH6327

Infineon Technologies · MOSFETs · SOT-323

BSS214NWH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement-mode MOSFET, logic level rated for 2.5 V drive with a maximum gate-source voltage of ±12 V.
2 S passive Source of the N-channel MOSFET, shown at the bottom of the symbol with the body diode anode, and the continuous drain current is 1.5 A at TA=25 °C.
3 D passive Drain of the N-channel MOSFET with a 20 V drain-source breakdown voltage (minimum), 1.5 A continuous and 6 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate threshold voltage V GS(th) 0.7 0.95 1.2 V V DS=0 V, I D=3.7 µA 2
Drain-source on-state resistance R DS(on) 171 250 mΩ V GS=2.5 V, I D=0.7 A 2
Drain-source on-state resistance R DS(on) 106 140 mΩ V GS=4.5 V, I D=1.5 A 2
Gate-source leakage current I GSS 100 nA V GS=12 V, V DS=0 V 2
Drain-source leakage current I DSS 1 μA V DS=20 V, V GS=0 V, T j=25 °C 2
Drain-source leakage current I DSS 100 µA V DS=20 V, V GS=0 V, T j=150 °C 2
Drain-source breakdown voltage V (BR)DSS 20 V V GS= 0 V, I D= 250 µA 2
Transconductance g fs 4 S /V DS/>2/I D/R DS(on)max, I D=1.2 A 2
Input capacitance C iss 107 143 pF V GS=0 V, V DS=10 V, f=1 MHz 3
Output capacitance C oss 46 62 pF V GS=0 V, V DS=10 V, f=1 MHz 3
Reverse transfer capacitance C rss 6 pF V GS=0 V, V DS=10 V, f=1 MHz 3
Turn-on delay time t d(on) 4.1 ns V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω 3
Rise time t r 7.8 ns V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω 3
Turn-off delay time t d(off) 6.8 ns V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω 3
Fall time t f 1.4 ns V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω 3
Gate to source charge Q gs 0.24 nC V DD=10 V, I D=1.5 A, V GS=0 to 5 V 3
Gate to drain charge Q gd 0.2 nC V DD=10 V, I D=1.5 A, V GS=0 to 5 V 3
Gate charge total Q g 0.8 nC V DD=10 V, I D=1.5 A, V GS=0 to 5 V 3
Gate plateau voltage V plateau 2.2 V V DD=10 V, I D=1.5 A, V GS=0 to 5 V 3
Diode continuous forward current I S 0.5 A 3
Diode pulse current I S,pulse 6 A 3
Diode forward voltage V SD 0.8 1.1 V V GS=0 V, I F=1.5 A, T j=25 °C 3
Reverse recovery time t rr 8.4 ns V R=10 V, I F=1.5 A, di F/dt=100 A/µs, T A=25 °C 3
Reverse recovery charge Q rr 1.7 nC V R=10 V, I F=1.5 A, di F/dt=100 A/µs, T A=25 °C 3
Continuous drain current I D 1.5 A T A=25 °C 1
Continuous drain current I D 1.2 A T A=70 °C 1
Pulsed drain current I D,pulse 6 A T A=25 °C 1
Avalanche energy, single pulse E AS 3.7 mJ I D=1.5 A, R GS=25 Ω 1
Reverse diode dv/dt dv/dt 6 kV/µs I D=1.5 A, V DS=16 V, di/dt=200 A/µs, T j,max=150 °C 1
Gate source voltage V GS -12 12 V 1
Operating and storage temperature T j, T stg -55 150 °C 1
Soldering temperature 260 °C 1
ESD class HBM (JESD22-A114) 250 V Class 0 (<250V), JESD22-A114 HBM 1
Thermal resistance, junction - ambient R thJA 250 K/W minimal footprint 2

CAD (KiCad official)

  • Symbol: BSS214NWH6327
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bss214nwh6327-etched.step / bss214nwh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss214nwh6327.step / bss214nwh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 3ff58ee0a6003944, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF