component
PJM10H01PSA
Public Made by Adomby adom
PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJM10H01PSA
PJSEMI · MOSFETs · SOT-23
PJM10H01PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V (absolute maximum) and driven at VGS = -10 V for the stated RDS(on) of 650 mΩ. |
| 2 | Source | passive | Source of the P-channel MOSFET; the datasheet rates the source-drain diode forward current (-IS) at 1 A maximum. |
| 3 | Drain | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -VDS = 100 V, continuous drain current of -ID = 1 A and pulsed drain current of -IDM = 1.5 A (absolute maximum ratings). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | -ID | 1 | A | 1 | |||
| Drain Current-Pulsed | -IDM | 1.5 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.5 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | °C/W | Note2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | -V(BR)DSS | 100 | V | VGS=0V,ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | -IDSS | 100 | nA | VDS=-80V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | -VGS(th) | 1 | 2.5 | V | VDS=VGS,ID=-250μA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 650 | mΩ | VGS=-10V,ID=-1A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 700 | mΩ | VGS=-6V,ID=-0.5A | 2 | ||
| Turn-on Delay Time | td(on) | 7 | 11 | nS | VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω | 2 | |
| Turn-on Rise Time | tr | 11 | 17 | nS | VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω | 2 | |
| Turn-off Delay Time | td(off) | 9 | 15 | nS | VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω | 2 | |
| Turn-off Fall Time | tf | 10 | 15 | nS | VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω | 2 | |
| Total Gate Charge | Qg | 3.3 | 4 | nC | VDD=-50V,ID=-1A, VGS=-10V | 2 | |
| Diode Forward Voltage | -VSD | 1.3 | V | VGS=0V,IS=-0.5A | 2 | ||
| Diode Forward Current | -IS | 1 | A | 2 |
CAD (KiCad official)
- Symbol:
PJM10H01PSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pjm10h01psa-etched.step/pjm10h01psa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm10h01psa.step/pjm10h01psa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (7 pp, sha256
9f8138a6a92c23a9, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).