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Contents

README

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PJM10H01PSA

PJSEMI · MOSFETs · SOT-23

PJM10H01PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET, rated for VGS of ±20 V (absolute maximum) and driven at VGS = -10 V for the stated RDS(on) of 650 mΩ.
2 Source passive Source of the P-channel MOSFET; the datasheet rates the source-drain diode forward current (-IS) at 1 A maximum.
3 Drain passive Drain of the P-channel MOSFET, rated for a drain-source voltage of -VDS = 100 V, continuous drain current of -ID = 1 A and pulsed drain current of -IDM = 1.5 A (absolute maximum ratings).

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage -VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous -ID 1 A 1
Drain Current-Pulsed -IDM 1.5 A 1
Maximum Power Dissipation PD 0.5 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 250 °C/W Note2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage -V(BR)DSS 100 V VGS=0V,ID=-250μA 2
Zero Gate Voltage Drain Current -IDSS 100 nA VDS=-80V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage -VGS(th) 1 2.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-Resistance RDS(on) 650 mΩ VGS=-10V,ID=-1A 2
Drain-Source On-Resistance RDS(on) 700 mΩ VGS=-6V,ID=-0.5A 2
Turn-on Delay Time td(on) 7 11 nS VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω 2
Turn-on Rise Time tr 11 17 nS VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω 2
Turn-off Delay Time td(off) 9 15 nS VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω 2
Turn-off Fall Time tf 10 15 nS VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω 2
Total Gate Charge Qg 3.3 4 nC VDD=-50V,ID=-1A, VGS=-10V 2
Diode Forward Voltage -VSD 1.3 V VGS=0V,IS=-0.5A 2
Diode Forward Current -IS 1 A 2

CAD (KiCad official)

  • Symbol: PJM10H01PSA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pjm10h01psa-etched.step / pjm10h01psa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm10h01psa.step / pjm10h01psa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 9f8138a6a92c23a9, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF