component
FDV301N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDV301N-HXY
HXY MOSFET · MOSFETs · SOT-23
FDV301N-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20V, ESD rated HBM ≥2000V, and the device is specified with VGS(th) of 0.8V min to 1.5V max at VDS=3V, ID=100µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rating of 30V. |
| 3 | D | passive | Drain terminal on the single-lead side of the package; VDS max 30V, continuous drain current 0.1A at TA=25℃ and 0.65A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 0.1 | A | TJ = 150℃, TA = 25℃ | 1 | ||
| Continuous Drain Current | ID | 0.07 | A | TJ = 150℃, TA = 100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 0.65 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 200 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0V, ID = 10µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.2 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -2 | 2 | µA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.5 | V | VDS = 3V, ID = 100µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2.2 | Ω | VGS = 10V, ID = 10mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 3 | Ω | VGS = 4.5V, ID = 1mA | 2 | ||
| Forward Transconductance | gFS | 20 | mS | VDS = 3V, ID = 10mA | 2 |
CAD (KiCad official)
- Symbol:
FDV301N-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fdv301n-hxy-etched.step/fdv301n-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdv301n-hxy.step/fdv301n-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
21d4589b279b3669, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).