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FDV301N-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDV301N-HXY

HXY MOSFET · MOSFETs · SOT-23

FDV301N-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20V, ESD rated HBM ≥2000V, and the device is specified with VGS(th) of 0.8V min to 1.5V max at VDS=3V, ID=100µA.
2 S passive Source terminal of the N-channel MOSFET, with drain-source voltage rating of 30V.
3 D passive Drain terminal on the single-lead side of the package; VDS max 30V, continuous drain current 0.1A at TA=25℃ and 0.65A pulsed.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.1 A TJ = 150℃, TA = 25℃ 1
Continuous Drain Current ID 0.07 A TJ = 150℃, TA = 100℃ 1
Drain Current-Pulsed IDM 0.65 A Note 1 1
Maximum Power Dissipation PD 0.35 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 200 ℃/W Note 2 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current IDSS 0.2 µA VDS = 30V, VGS = 0V 2
Gate-Source Leakage Current IGSS -2 2 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.8 1.5 V VDS = 3V, ID = 100µA 2
Drain-Source On-Resistance RDS(on) 2.2 Ω VGS = 10V, ID = 10mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS = 4.5V, ID = 1mA 2
Forward Transconductance gFS 20 mS VDS = 3V, ID = 10mA 2

CAD (KiCad official)

  • Symbol: FDV301N-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdv301n-hxy-etched.step / fdv301n-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdv301n-hxy.step / fdv301n-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 21d4589b279b3669, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF