# FDV301N-HXY

**HXY MOSFET** · MOSFETs · SOT-23

FDV301N-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20V, ESD rated HBM ≥2000V, and the device is specified with VGS(th) of 0.8V min to 1.5V max at VDS=3V, ID=100µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rating of 30V. |
| 3 | D | passive | Drain terminal on the single-lead side of the package; VDS max 30V, continuous drain current 0.1A at TA=25℃ and 0.65A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 0.1 | A | TJ = 150℃, TA = 25℃ | 1 |
| Continuous Drain Current | ID |  |  | 0.07 | A | TJ = 150℃, TA = 100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 0.65 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 200 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage | VDS | 30 |  |  | V | VGS = 0V, ID = 10µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 0.2 | µA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage Current | IGSS | -2 |  | 2 | µA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 |  | 1.5 | V | VDS = 3V, ID = 100µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 2.2 | Ω | VGS = 10V, ID = 10mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 3 | Ω | VGS = 4.5V, ID = 1mA | 2 |
| Forward Transconductance | gFS | 20 |  |  | mS | VDS = 3V, ID = 10mA | 2 |

## CAD (KiCad official)

- Symbol: `FDV301N-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fdv301n-hxy-etched.step` / `fdv301n-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdv301n-hxy.step` / `fdv301n-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758121843959959552) (5 pp, sha256 `21d4589b279b3669`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fdv301n-hxy-datasheet.pdf)