component
CSD19533KCS
Public Made by Adomby adom
Texas Instruments MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD19533KCS
Texas Instruments · MOSFETs · TO-220
CSD19533KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage is ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; the drain-to-source voltage is rated at 100 V, and continuous drain current is limited to 100 A by the package. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate-to-source voltage rating of ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250μA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VGS = 0V, VDS = 80V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0V, VGS = 20V | 3 | ||
| Gate-to-Source Threshold Voltage | VGS(th) | 2.2 | 2.8 | 3.4 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-Source On-Resistance | RDS(on) | 9.7 | 12.2 | mΩ | VGS = 6V, ID = 55A | 3 | |
| Drain-to-Source On-Resistance | RDS(on) | 8.7 | 10.5 | mΩ | VGS = 10V, ID = 55A | 3 | |
| Input Capacitance | Ciss | 2050 | 2670 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Output Capacitance | Coss | 395 | 514 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 9.6 | 12.5 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Series Gate Resistance | RG | 1.2 | 2.4 | Ω | 3 | ||
| Gate Charge Total (10V) | Qg | 27 | 35 | nC | VDS = 50V, ID = 55A | 3 | |
| Diode Forward Voltage | VSD | 0.9 | 1.1 | V | ISD = 55A, VGS = 0V | 3 | |
| Drain-to-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (Package limited) | ID | 100 | A | Package limited | 1 | ||
| Continuous Drain Current (Silicon limited) | ID | 86 | A | Silicon limited, TC = 25°C | 1 | ||
| Continuous Drain Current (Silicon limited) | ID | 61 | A | Silicon limited, TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 207 | A | Pulse duration ≤100μs, duty cycle ≤1% (footnote 1) | 1 | ||
| Power Dissipation | PD | 188 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Avalanche Energy, single pulse | EAS | 106 | mJ | ID = 46A, L = 0.1mH, RG = 25Ω | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.8 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
CSD19533KCS - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
csd19533kcs-etched.step/csd19533kcs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd19533kcs.step/csd19533kcs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (14 pp, sha256
af9adddb96804c9a, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).