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CSD19533KCS

Texas Instruments · MOSFETs · TO-220

CSD19533KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage is ±20 V.
2 Drain passive Drain terminal of the MOSFET; the drain-to-source voltage is rated at 100 V, and continuous drain current is limited to 100 A by the package.
3 Source passive Source terminal of the MOSFET, the reference for the gate-to-source voltage rating of ±20 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage BVDSS 100 V VGS = 0V, ID = 250μA 3
Drain-to-Source Leakage Current IDSS 1 μA VGS = 0V, VDS = 80V 3
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0V, VGS = 20V 3
Gate-to-Source Threshold Voltage VGS(th) 2.2 2.8 3.4 V VDS = VGS, ID = 250μA 3
Drain-to-Source On-Resistance RDS(on) 9.7 12.2 mΩ VGS = 6V, ID = 55A 3
Drain-to-Source On-Resistance RDS(on) 8.7 10.5 mΩ VGS = 10V, ID = 55A 3
Input Capacitance Ciss 2050 2670 pF VGS = 0V, VDS = 50V, ƒ = 1MHz 3
Output Capacitance Coss 395 514 pF VGS = 0V, VDS = 50V, ƒ = 1MHz 3
Reverse Transfer Capacitance Crss 9.6 12.5 pF VGS = 0V, VDS = 50V, ƒ = 1MHz 3
Series Gate Resistance RG 1.2 2.4 Ω 3
Gate Charge Total (10V) Qg 27 35 nC VDS = 50V, ID = 55A 3
Diode Forward Voltage VSD 0.9 1.1 V ISD = 55A, VGS = 0V 3
Drain-to-Source Voltage VDS 100 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (Package limited) ID 100 A Package limited 1
Continuous Drain Current (Silicon limited) ID 86 A Silicon limited, TC = 25°C 1
Continuous Drain Current (Silicon limited) ID 61 A Silicon limited, TC = 100°C 1
Pulsed Drain Current IDM 207 A Pulse duration ≤100μs, duty cycle ≤1% (footnote 1) 1
Power Dissipation PD 188 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Avalanche Energy, single pulse EAS 106 mJ ID = 46A, L = 0.1mH, RG = 25Ω 1
Junction-to-Case Thermal Resistance RθJC 0.8 °C/W 3

CAD (KiCad official)

  • Symbol: CSD19533KCS
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: csd19533kcs-etched.step / csd19533kcs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd19533kcs.step / csd19533kcs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (14 pp, sha256 af9adddb96804c9a, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF