component
DMG1026UV-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMG1026UV-7
Diodes Incorporated · MOSFETs · SOT-563
DMG1026UV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Q1 N-channel MOSFET (VDSS 60V, ID up to 440mA at TA=+25°C, t≤10s). |
| 2 | G1 | input | Gate of Q1, with an internal gate protection diode (ESD protected to 2kV), VGSS ±20V maximum, threshold 0.5V to 1.8V. |
| 3 | D2 | passive | Drain of Q2 N-channel MOSFET (VDSS 60V, RDS(ON) 1.8Ω max at VGS=10V). |
| 4 | S2 | passive | Source of Q2 N-channel MOSFET (continuous source current IS 200mA). |
| 5 | G2 | input | Gate of Q2, with an internal gate protection diode (ESD protected to 2kV), VGSS ±20V maximum, threshold 0.5V to 1.8V. |
| 6 | D1 | passive | Drain of Q1 N-channel MOSFET (VDSS 60V, RDS(ON) 2.1Ω max at VGS=4.5V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 50V, VGS = 0V, TJ = +25°C | 3 | ||
| Gate-Source Leakage | IGSS | 50 | nA | VGS = ±5V, VDS = 0V | 3 | ||
| Gate-Source Leakage | IGSS | 150 | nA | VGS = ±10V, VDS = 0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | 0.5 | 1.8 | V | VDS = VGS, ID = 250μA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.2 | 1.8 | Ω | VGS = 10V, ID = 500mA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.4 | 2.1 | Ω | VGS = 4.5V, ID = 200mA | 3 | |
| Forward Transfer Admittance | /Yfs/ | 80 | 580 | mS | VDS = 10V, ID = 200mA | 3 | |
| Continuous Source Current | IS | 200 | mA | 3 | |||
| Diode Forward Voltage | VSD | 0.8 | 1.3 | V | VGS = 0V, IS = 200mA | 3 | |
| Drain-Source Voltage | VDSS | 60 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 410 | mA | VGS = 10V, steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current | ID | 300 | mA | VGS = 10V, steady state, TA = +85°C (Note 6) | 2 | ||
| Continuous Drain Current | ID | 440 | mA | VGS = 10V, t ≤ 10s, TA = +25°C (Note 7) | 2 | ||
| Continuous Drain Current | ID | 320 | mA | VGS = 10V, t ≤ 10s, TA = +85°C (Note 7) | 2 | ||
| Continuous Drain Current | ID | 380 | mA | VGS = 4.5V, steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current | ID | 270 | mA | VGS = 4.5V, steady state, TA = +85°C (Note 6) | 2 | ||
| Continuous Drain Current | ID | 295 | mA | VGS = 4.5V, t ≤ 10s, TA = +85°C (Note 7) | 2 | ||
| Pulsed Drain Current | IDM | 1 | A | 10µs pulse, duty cycle = 1% (Note 8) | 2 | ||
| Power Dissipation | PD | 0.58 | W | Note 6 | 2 | ||
| Power Dissipation | PD | 0.65 | W | t ≤ 10s (Note 7) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 213 | °C/W | @TA = +25°C (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 192 | °C/W | @TA = +25°C, t ≤ 10s (Note 7) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Input Capacitance | Ciss | 32 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 4.4 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 2.9 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Gate Resistance | Rg | 126 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 3 | ||
| Total Gate Charge | Qg | 0.45 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 3 | ||
| Gate-Source Charge | Qgs | 0.08 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 3 | ||
| Gate-Drain Charge | Qgd | 0.08 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 3 | ||
| Turn-On Delay Time | tD(ON) | 3.4 | ns | VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA | 3 | ||
| Turn-On Rise Time | tR | 3.4 | ns | VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA | 3 | ||
| Turn-Off Delay Time | tD(OFF) | 26.4 | ns | VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA | 3 | ||
| Turn-Off Fall Time | tF | 16.3 | ns | VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMG1026UV-7 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
dmg1026uv-7-etched.step/dmg1026uv-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg1026uv-7.step/dmg1026uv-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
ec6cf868cdb9f9c9, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).