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DMG1026UV-7

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Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG1026UV-7

Diodes Incorporated · MOSFETs · SOT-563

DMG1026UV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Q1 N-channel MOSFET (VDSS 60V, ID up to 440mA at TA=+25°C, t≤10s).
2 G1 input Gate of Q1, with an internal gate protection diode (ESD protected to 2kV), VGSS ±20V maximum, threshold 0.5V to 1.8V.
3 D2 passive Drain of Q2 N-channel MOSFET (VDSS 60V, RDS(ON) 1.8Ω max at VGS=10V).
4 S2 passive Source of Q2 N-channel MOSFET (continuous source current IS 200mA).
5 G2 input Gate of Q2, with an internal gate protection diode (ESD protected to 2kV), VGSS ±20V maximum, threshold 0.5V to 1.8V.
6 D1 passive Drain of Q1 N-channel MOSFET (VDSS 60V, RDS(ON) 2.1Ω max at VGS=4.5V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250μA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 50V, VGS = 0V, TJ = +25°C 3
Gate-Source Leakage IGSS 50 nA VGS = ±5V, VDS = 0V 3
Gate-Source Leakage IGSS 150 nA VGS = ±10V, VDS = 0V 3
Gate Threshold Voltage VGS(TH) 0.5 1.8 V VDS = VGS, ID = 250μA 3
Static Drain-Source On-Resistance RDS(ON) 1.2 1.8 Ω VGS = 10V, ID = 500mA 3
Static Drain-Source On-Resistance RDS(ON) 1.4 2.1 Ω VGS = 4.5V, ID = 200mA 3
Forward Transfer Admittance /Yfs/ 80 580 mS VDS = 10V, ID = 200mA 3
Continuous Source Current IS 200 mA 3
Diode Forward Voltage VSD 0.8 1.3 V VGS = 0V, IS = 200mA 3
Drain-Source Voltage VDSS 60 V TA = +25°C 2
Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
Continuous Drain Current ID 410 mA VGS = 10V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current ID 300 mA VGS = 10V, steady state, TA = +85°C (Note 6) 2
Continuous Drain Current ID 440 mA VGS = 10V, t ≤ 10s, TA = +25°C (Note 7) 2
Continuous Drain Current ID 320 mA VGS = 10V, t ≤ 10s, TA = +85°C (Note 7) 2
Continuous Drain Current ID 380 mA VGS = 4.5V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current ID 270 mA VGS = 4.5V, steady state, TA = +85°C (Note 6) 2
Continuous Drain Current ID 295 mA VGS = 4.5V, t ≤ 10s, TA = +85°C (Note 7) 2
Pulsed Drain Current IDM 1 A 10µs pulse, duty cycle = 1% (Note 8) 2
Power Dissipation PD 0.58 W Note 6 2
Power Dissipation PD 0.65 W t ≤ 10s (Note 7) 2
Thermal Resistance, Junction to Ambient RθJA 213 °C/W @TA = +25°C (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 192 °C/W @TA = +25°C, t ≤ 10s (Note 7) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Input Capacitance Ciss 32 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 4.4 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 2.9 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Gate Resistance Rg 126 Ω VDS = 0V, VGS = 0V, f = 1MHz 3
Total Gate Charge Qg 0.45 pC VGS = 4.5V, VDS = 10V, ID = 250mA 3
Gate-Source Charge Qgs 0.08 pC VGS = 4.5V, VDS = 10V, ID = 250mA 3
Gate-Drain Charge Qgd 0.08 pC VGS = 4.5V, VDS = 10V, ID = 250mA 3
Turn-On Delay Time tD(ON) 3.4 ns VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA 3
Turn-On Rise Time tR 3.4 ns VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA 3
Turn-Off Delay Time tD(OFF) 26.4 ns VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA 3
Turn-Off Fall Time tF 16.3 ns VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMG1026UV-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmg1026uv-7-etched.step / dmg1026uv-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg1026uv-7.step / dmg1026uv-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 ec6cf868cdb9f9c9, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF