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2SA1015-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sa1015-msfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SA1015-MS

MSKSEMI · Bipolar (BJT) · SOT-23

2SA1015-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet gives no separate pin limit, and the base drive for the saturation test is IB = -10 mA at IC = -100 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage is rated VEBO = -5 V and the maximum continuous collector current is IC = -150 mA.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated at VCBO = -50 V and VCEO = -50 V, with continuous collector current IC = -150 mA and collector power dissipation PC = 200 mW.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO -50 V IC= -0.1mA, IB=0 2
Collector-base breakdown voltage V(BR)CBO -50 V IC= -100uA,IE=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 u A, IC=0 2
Collector cut-off current ICBO -0.1 μA VCB=-50V ,IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB=- 5V, IC=0 2
DC current gain hFE 130 400 VCE=-6V,IC= -2mA 2
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-100 mA, IB= -10mA 2
Base-emitter saturation voltage VBE(sat) -1.1 V IC=-100 mA, IB= -10mA 2
Transition frequency fT 80 MHz VCE=-10V,IC= -1mA f=30MHz 2
Collector current, continuous IC -150 mA Continuous 2
Collector-base voltage VCBO -50 V 2
Collector-emitter voltage VCEO -50 V 2
Emitter-base voltage VEBO -5 V 2
Collector power dissipation PC 200 mW 2
Junction temperature TJ 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient RθJA 625 ℃/W 2

CAD (KiCad official)

  • Symbol: 2SA1015-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2sa1015-ms-etched.step / 2sa1015-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1015-ms.step / 2sa1015-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 abcba72d8b88db4b, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF