component
2SA1015-MS
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2SA1015-MS
MSKSEMI · Bipolar (BJT) · SOT-23
2SA1015-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives no separate pin limit, and the base drive for the saturation test is IB = -10 mA at IC = -100 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage is rated VEBO = -5 V and the maximum continuous collector current is IC = -150 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated at VCBO = -50 V and VCEO = -50 V, with continuous collector current IC = -150 mA and collector power dissipation PC = 200 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC= -0.1mA, IB=0 | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC= -100uA,IE=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -100 u A, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-50V ,IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=- 5V, IC=0 | 2 | ||
| DC current gain | hFE | 130 | 400 | VCE=-6V,IC= -2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-100 mA, IB= -10mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC=-100 mA, IB= -10mA | 2 | ||
| Transition frequency | fT | 80 | MHz | VCE=-10V,IC= -1mA f=30MHz | 2 | ||
| Collector current, continuous | IC | -150 | mA | Continuous | 2 | ||
| Collector-base voltage | VCBO | -50 | V | 2 | |||
| Collector-emitter voltage | VCEO | -50 | V | 2 | |||
| Emitter-base voltage | VEBO | -5 | V | 2 | |||
| Collector power dissipation | PC | 200 | mW | 2 | |||
| Junction temperature | TJ | 150 | ℃ | 2 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal resistance, junction to ambient | RθJA | 625 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
2SA1015-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sa1015-ms-etched.step/2sa1015-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1015-ms.step/2sa1015-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
abcba72d8b88db4b, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).