component
WPM2081-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM2081-3
WILLSEMI Will Semicon · MOSFETs · SOT-23
WPM2081-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage is ±12 V (VGS). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no source-specific limit beyond the device absolute maximum ratings. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -20 V (VDS) and the continuous drain current is -3.2 A at TA=25°C (10 s). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 | 2 | |
| Continuous Drain Current (a) | ID | -3.2 | A | Surface mounted, 1 in² pad; t≤10 s; TA=25°C | 2 | ||
| Continuous Drain Current (a) | ID | -2.9 | A | Surface mounted, 1 in² pad; steady state; TA=25°C | 2 | ||
| Continuous Drain Current (a) | ID | -2.6 | A | Surface mounted, 1 in² pad; t≤10 s; TA=70°C | 2 | ||
| Continuous Drain Current (a) | ID | -2.3 | A | Surface mounted, 1 in² pad; steady state; TA=70°C | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.96 | W | Surface mounted, 1 in² pad; t≤10 s; TA=25°C | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.8 | W | Surface mounted, 1 in² pad; steady state; TA=25°C | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.62 | W | Surface mounted, 1 in² pad; t≤10 s; TA=70°C | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.52 | W | Surface mounted, 1 in² pad; steady state; TA=70°C | 2 | ||
| Continuous Drain Current (b) | ID | -2.9 | A | Surface mounted, minimum pad; t≤10 s; TA=25°C | 2 | ||
| Continuous Drain Current (b) | ID | -2.6 | A | Surface mounted, minimum pad; steady state; TA=25°C | 2 | ||
| Continuous Drain Current (b) | ID | -2.3 | A | Surface mounted, minimum pad; t≤10 s; TA=70°C | 2 | ||
| Continuous Drain Current (b) | ID | -2.1 | A | Surface mounted, minimum pad; steady state; TA=70°C | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.78 | W | Surface mounted, minimum pad; t≤10 s; TA=25°C | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.66 | W | Surface mounted, minimum pad; steady state; TA=25°C | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.5 | W | Surface mounted, minimum pad; t≤10 s; TA=70°C | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.42 | W | Surface mounted, minimum pad; steady state; TA=70°C | 2 | ||
| Pulsed Drain Current (c) | IDM | -12 | A | Repetitive rating, pulse width limited by junction temperature, tp=10 µs, duty cycle=1% | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 105 | 130 | °C/W | Surface mounted, 1 in² pad; t≤10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 120 | 155 | °C/W | Surface mounted, 1 in² pad; steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 130 | 160 | °C/W | Surface mounted, minimum pad; t≤10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 145 | 190 | °C/W | Surface mounted, minimum pad; steady state | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 40 | 60 | °C/W | Steady state | 2 | |
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = -250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -16 V, VGS = 0 V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.35 | -0.65 | -1 | V | VGS = VDS, ID = -250 µA | 3 |
| Drain-to-Source On-resistance | RDS(on) | 43 | 65 | mΩ | VGS = -4.5 V, ID = -3.2 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 55 | 81 | mΩ | VGS = -2.5 V, ID = -3.0 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 72 | 110 | mΩ | VGS = -1.8 V, ID = -2.5 A | 3 | |
| Forward Transconductance | gFS | 6 | 16 | S | VDS = -5 V, ID = -4 A | 3 | |
| Body Diode Forward Voltage | VSD | -0.8 | -1.5 | V | VGS = 0 V, IS = -3.2 A | 3 | |
| Input Capacitance | CISS | 1062 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -6 V | 3 | ||
| Output Capacitance | COSS | 146 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -6 V | 3 | ||
| Reverse Transfer Capacitance | CRSS | 124 | pF | VGS = 0 V, f = 1.0 MHz, VDS = -6 V | 3 | ||
| Total Gate Charge | QG(TOT) | 10 | nC | VGS = -4.5 V, VDS = -10 V, ID = -3.3 A | 3 | ||
| Threshold Gate Charge | QG(TH) | 0.8 | nC | VGS = -4.5 V, VDS = -10 V, ID = -3.3 A | 3 | ||
| Gate-to-Source Charge | QGS | 1.8 | nC | VGS = -4.5 V, VDS = -10 V, ID = -3.3 A | 3 | ||
| Gate-to-Drain Charge | QGD | 1.7 | nC | VGS = -4.5 V, VDS = -10 V, ID = -3.3 A | 3 | ||
| Turn-On Delay Time | td(ON) | 11.4 | ns | VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω | 3 | ||
| Rise Time | tr | 6.8 | ns | VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 67.6 | ns | VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω | 3 | ||
| Fall Time | tf | 16.8 | ns | VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω | 3 |
CAD (KiCad official)
- Symbol:
WPM2081-3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wpm2081-3-etched.step/wpm2081-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm2081-3.step/wpm2081-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256
c0ce2061aec19a32, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).