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WPM2081-3

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WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WPM2081-3

WILLSEMI Will Semicon · MOSFETs · SOT-23

WPM2081-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage is ±12 V (VGS).
2 S passive Source terminal of the P-channel MOSFET; the datasheet gives no source-specific limit beyond the device absolute maximum ratings.
3 D passive Drain terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -20 V (VDS) and the continuous drain current is -3.2 A at TA=25°C (10 s).

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 2
Gate-Source Voltage VGS -12 12 V Printed as ±12 2
Continuous Drain Current (a) ID -3.2 A Surface mounted, 1 in² pad; t≤10 s; TA=25°C 2
Continuous Drain Current (a) ID -2.9 A Surface mounted, 1 in² pad; steady state; TA=25°C 2
Continuous Drain Current (a) ID -2.6 A Surface mounted, 1 in² pad; t≤10 s; TA=70°C 2
Continuous Drain Current (a) ID -2.3 A Surface mounted, 1 in² pad; steady state; TA=70°C 2
Maximum Power Dissipation (a) PD 0.96 W Surface mounted, 1 in² pad; t≤10 s; TA=25°C 2
Maximum Power Dissipation (a) PD 0.8 W Surface mounted, 1 in² pad; steady state; TA=25°C 2
Maximum Power Dissipation (a) PD 0.62 W Surface mounted, 1 in² pad; t≤10 s; TA=70°C 2
Maximum Power Dissipation (a) PD 0.52 W Surface mounted, 1 in² pad; steady state; TA=70°C 2
Continuous Drain Current (b) ID -2.9 A Surface mounted, minimum pad; t≤10 s; TA=25°C 2
Continuous Drain Current (b) ID -2.6 A Surface mounted, minimum pad; steady state; TA=25°C 2
Continuous Drain Current (b) ID -2.3 A Surface mounted, minimum pad; t≤10 s; TA=70°C 2
Continuous Drain Current (b) ID -2.1 A Surface mounted, minimum pad; steady state; TA=70°C 2
Maximum Power Dissipation (b) PD 0.78 W Surface mounted, minimum pad; t≤10 s; TA=25°C 2
Maximum Power Dissipation (b) PD 0.66 W Surface mounted, minimum pad; steady state; TA=25°C 2
Maximum Power Dissipation (b) PD 0.5 W Surface mounted, minimum pad; t≤10 s; TA=70°C 2
Maximum Power Dissipation (b) PD 0.42 W Surface mounted, minimum pad; steady state; TA=70°C 2
Pulsed Drain Current (c) IDM -12 A Repetitive rating, pulse width limited by junction temperature, tp=10 µs, duty cycle=1% 2
Operating Junction Temperature TJ -55 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (a) RθJA 105 130 °C/W Surface mounted, 1 in² pad; t≤10 s 2
Junction-to-Ambient Thermal Resistance (a) RθJA 120 155 °C/W Surface mounted, 1 in² pad; steady state 2
Junction-to-Ambient Thermal Resistance (b) RθJA 130 160 °C/W Surface mounted, minimum pad; t≤10 s 2
Junction-to-Ambient Thermal Resistance (b) RθJA 145 190 °C/W Surface mounted, minimum pad; steady state 2
Junction-to-Case Thermal Resistance RθJC 40 60 °C/W Steady state 2
Drain-to-Source Breakdown Voltage BVDSS -20 V VGS = 0 V, ID = -250 µA 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS = -16 V, VGS = 0 V 3
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 3
Gate Threshold Voltage VGS(TH) -0.35 -0.65 -1 V VGS = VDS, ID = -250 µA 3
Drain-to-Source On-resistance RDS(on) 43 65 mΩ VGS = -4.5 V, ID = -3.2 A 3
Drain-to-Source On-resistance RDS(on) 55 81 mΩ VGS = -2.5 V, ID = -3.0 A 3
Drain-to-Source On-resistance RDS(on) 72 110 mΩ VGS = -1.8 V, ID = -2.5 A 3
Forward Transconductance gFS 6 16 S VDS = -5 V, ID = -4 A 3
Body Diode Forward Voltage VSD -0.8 -1.5 V VGS = 0 V, IS = -3.2 A 3
Input Capacitance CISS 1062 pF VGS = 0 V, f = 1.0 MHz, VDS = -6 V 3
Output Capacitance COSS 146 pF VGS = 0 V, f = 1.0 MHz, VDS = -6 V 3
Reverse Transfer Capacitance CRSS 124 pF VGS = 0 V, f = 1.0 MHz, VDS = -6 V 3
Total Gate Charge QG(TOT) 10 nC VGS = -4.5 V, VDS = -10 V, ID = -3.3 A 3
Threshold Gate Charge QG(TH) 0.8 nC VGS = -4.5 V, VDS = -10 V, ID = -3.3 A 3
Gate-to-Source Charge QGS 1.8 nC VGS = -4.5 V, VDS = -10 V, ID = -3.3 A 3
Gate-to-Drain Charge QGD 1.7 nC VGS = -4.5 V, VDS = -10 V, ID = -3.3 A 3
Turn-On Delay Time td(ON) 11.4 ns VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω 3
Rise Time tr 6.8 ns VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω 3
Turn-Off Delay Time td(OFF) 67.6 ns VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω 3
Fall Time tf 16.8 ns VGS = -4.5 V, VDS = -6 V, ID = -3.3 A, RG = 6 Ω 3

CAD (KiCad official)

  • Symbol: WPM2081-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wpm2081-3-etched.step / wpm2081-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wpm2081-3.step / wpm2081-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256 c0ce2061aec19a32, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF