component
IXFA12N50P
Public Made by Adomby adom
IXYS MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXFA12N50P
IXYS · MOSFETs · TO-263
IXFA12N50P from IXYS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V continuous and ±40 V transient, with VGS(th) of 3.0 to 5.5 V at ID = 1 mA. |
| 2 | D | passive | Drain, also connected to the TAB; VDSS is 500 V and ID25 is 12 A at TC = 25°C. |
| 3 | S | passive | Source; continuous source current IS is 12 A (VGS = 0 V) with body diode VSD up to 1.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-Gate Voltage | VDGR | 500 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 | ||
| Gate-Source Voltage Continuous | VGSS | -30 | 30 | V | Continuous | 1 | |
| Gate-Source Voltage Transient | VGSM | -40 | 40 | V | Transient | 1 | |
| Drain Current | ID25 | 12 | A | TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | TC = 25°C, pulse width limited by TJM | 1 | ||
| Avalanche Current | IA | 12 | A | TC = 25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 600 | mJ | TC = 25°C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 20 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Power Dissipation | PD | 200 | W | TC = 25°C | 1 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum Junction Temperature | TJM | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Lead Temperature | TL | 300 | °C | 1.6mm (0.062) from case for 10s | 1 | ||
| Soldering Temperature | TSOLD | 260 | °C | Plastic body for 10s | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0V, ID = 250μA | 1 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5.5 | V | VDS = VGS, ID = 1mA | 1 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30V, VDS = 0V | 1 | |
| Drain Leakage Current | IDSS | 5 | μA | VDS = VDSS, VGS = 0V | 1 | ||
| Drain Leakage Current at 125°C | IDSS | 250 | μA | VDS = VDSS, VGS = 0V, TJ = 125°C | 1 | ||
| Static Drain-Source On-Resistance | RDS(on) | 500 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | ||
| Transconductance | gfs | 7.5 | 13 | S | VDS = 20V, ID = 0.5 • ID25, Note 1 | 2 | |
| Thermal Resistance Junction to Case | RthJC | 0.62 | °C/W | 2 | |||
| Case-to-Sink Thermal Resistance (TO-220) | RthCS | 0.5 | °C/W | TO-220 | 2 | ||
| Source Current (Diode) | IS | 12 | A | VGS = 0V | 2 | ||
| Source Current Pulsed (Diode) | ISM | 48 | A | Repetitive, pulse width limited by TJM | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Input Capacitance | Ciss | 1830 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 182 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 16 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 22 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) | 2 | ||
| Rise Time | tr | 27 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) | 2 | ||
| Turn-Off Delay Time | td(off) | 65 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) | 2 | ||
| Fall Time | tf | 20 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) | 2 | ||
| Total Gate Charge | Qg(on) | 29 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Drain Charge | Qgd | 10 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Reverse Recovery Time | trr | 300 | ns | IF = 6A, -di/dt = 150A/μs, VR = 100V, VGS = 0V | 2 | ||
| Reverse Recovery Charge | QRM | 2.8 | μC | IF = 6A, -di/dt = 150A/μs, VR = 100V, VGS = 0V | 2 | ||
| Reverse Recovery Current | IRM | 18.2 | A | IF = 6A, -di/dt = 150A/μs, VR = 100V, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
IXFA12N50P - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ixfa12n50p-etched.step/ixfa12n50p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfa12n50p.step/ixfa12n50p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (6 pp, sha256
fdfa167dc8b74a2d, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).