component
MD23N50
Public Made by Adomby adom
Minos MOSFETs, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMD23N50
Minos · MOSFETs · TO-3P
MD23N50 from Minos, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±30 V, with threshold VGS(TH) of 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated 500 V with continuous drain current of 23 A (80 A pulsed). |
| 3 | S | passive | Source; body diode continuous source current is 23 A and 80 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-3P |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 500 | V | 1 | |||
| Continuous Drain Current | ID | 23 | A | 1 | |||
| Continuous Drain Current | ID | 12.6 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | Note1: pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1200 | mJ | Note2: L=10mH, VDS=50V, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note3: ISD =23A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation (TO-220, TO-3PN) | PD | 230 | W | Package TO-220, TO-3PN | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.54 | ℃/W | No FullPAK, TO-3PN | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | No FullPAK, TO-3PN | 2 | ||
| Drain to Source Breakdown Voltage | VDSS | 500 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 10 | µA | VDS =500V, VGS= 0V, Tj = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =400V, VGS= 0V, Tj = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.22 | 0.26 | Ω | VGS=10V, ID=10A; Note4: pulse width tp≤300µs, δ≤2% | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA; Note4: pulse width tp≤300µs, δ≤2% | 2 | |
| Continuous Source Current (Body Diode) | IS | 23 | A | TC=25 °C | 3 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 80 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=23A, VGS=0V; Note4: pulse width tp≤300µs, δ≤2% | 3 |
CAD (KiCad official)
- Symbol:
MD23N50 - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files:
md23n50-etched.step/md23n50-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);md23n50.step/md23n50.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (10 pp, sha256
0b24d4b2bac744fb, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).