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MD23N50

Minos · MOSFETs · TO-3P

MD23N50 from Minos, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated ±30 V, with threshold VGS(TH) of 2.0 to 4.0 V at ID=250µA.
2 D passive Drain; drain-to-source voltage is rated 500 V with continuous drain current of 23 A (80 A pulsed).
3 S passive Source; body diode continuous source current is 23 A and 80 A pulsed.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-3P
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 500 V 1
Continuous Drain Current ID 23 A 1
Continuous Drain Current ID 12.6 A TC = 100 °C 1
Pulsed Drain Current IDM 80 A Note1: pulse width limited by maximum junction temperature 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 1200 mJ Note2: L=10mH, VDS=50V, Start TJ=25℃ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns Note3: ISD =23A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation (TO-220, TO-3PN) PD 230 W Package TO-220, TO-3PN 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 2
Junction-to-Case Thermal Resistance RθJC 0.54 ℃/W No FullPAK, TO-3PN 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W No FullPAK, TO-3PN 2
Drain to Source Breakdown Voltage VDSS 500 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 10 µA VDS =500V, VGS= 0V, Tj = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =400V, VGS= 0V, Tj = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 0.22 0.26 Ω VGS=10V, ID=10A; Note4: pulse width tp≤300µs, δ≤2% 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA; Note4: pulse width tp≤300µs, δ≤2% 2
Continuous Source Current (Body Diode) IS 23 A TC=25 °C 3
Maximum Pulsed Current (Body Diode) ISM 80 A 3
Diode Forward Voltage VSD 1.2 V IS=23A, VGS=0V; Note4: pulse width tp≤300µs, δ≤2% 3

CAD (KiCad official)

  • Symbol: MD23N50
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: md23n50-etched.step / md23n50-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); md23n50.step / md23n50.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (10 pp, sha256 0b24d4b2bac744fb, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF