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METR3906-G
Public Made by Adomby adom
MATSUKI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMETR3906-G
MATSUKI · Bipolar (BJT) · SOT-23
METR3906-G from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives VEBO of -5.0 V maximum and a continuous collector current of -200 mA. |
| 2 | E | passive | Emitter of the PNP transistor; the emitter-base voltage limit is -5.0 V. |
| 3 | C | passive | Collector of the PNP transistor; VCEO and VCBO are -40 V maximum and continuous IC is -200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (IC=-0.1mA) | hFE | 60 | IC= -0.1mA, VCE= -1.0V | 2 | |||
| DC Current Gain (IC=-1.0mA) | hFE | 80 | IC= -1.0mA, VCE= -1.0V | 2 | |||
| DC Current Gain (IC=-10mA) | hFE | 100 | 300 | IC= -10mA, VCE= -1.0V | 2 | ||
| DC Current Gain (IC=-50mA) | hFE | 60 | IC= -50mA, VCE= -1.0V | 2 | |||
| DC Current Gain (IC=-100mA) | hFE | 30 | IC= -100mA, VCE= -1.0V | 2 | |||
| Collector-Emitter Saturation Voltage (IC=-10mA) | VCE(sat) | -0.25 | V | IC= -10mA, IB= -1.0mA | 2 | ||
| Collector-Emitter Saturation Voltage (IC=-50mA) | VCE(sat) | -0.4 | V | IC= -50mA, IB= -5.0mA | 2 | ||
| Base-Emitter Saturation Voltage (IC=-10mA) | VBE(sat) | -0.65 | -0.85 | V | IC= -10mA, IB= -1.0mA | 2 | |
| Base-Emitter Saturation Voltage (IC=-50mA) | VBE(sat) | -0.95 | V | IC= -50mA, IB= -5.0mA | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | V | IC= -1.0mA, IB= 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC= -10μA, IE= 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE= -10μA, IC= 0 | 2 | ||
| Base Cutoff Current | IBL | -50 | nA | VCE= -30V, VEB= -3.0V | 2 | ||
| Collector Cutoff Current | ICEX | -50 | nA | VCE= -30V, VEB= -3.0V | 2 | ||
| Current-Gain-Bandwidth Product | fT | 250 | MHz | IC= -10mA, VCE= -20V, f=100MHz | 2 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB= -5.0V, IE=0, f=1.0MHz | 2 | ||
| Input Capacitance | Cibo | 10 | pF | VEB= -0.5V, IC=0, f=1.0MHz | 2 | ||
| Input Impedance | hie | 2 | 12 | kΩ | VCE= -10V, IC= -1.0mA, f=1.0KHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 10 | X10-4 | VCE= -10V, IC= -1.0mA, f=1.0KHz | 2 | |
| Small-Signal Current Gain | hfe | 100 | 400 | VCE= -10V, IC= -1.0mA, f=1.0KHz | 2 | ||
| Output Admittance | hoe | 3 | 60 | μmhos | VCE= -10V, IC= -1.0mA, f=1.0KHz | 2 | |
| Noise Figure | NF | 4 | dB | VCE= -5.0V, IC= -100μA, Rs=1.0 kΩ, f=1.0KHz | 2 | ||
| Delay Time | td | 35 | ns | VCC= -3.0V, VBE=0.5V, Ic= -10mA, IB1= -1.0mA | 2 | ||
| Rise Time | tr | 35 | ns | VCC= -3.0V, VBE=0.5V, Ic= -10mA, IB1= -1.0mA | 2 | ||
| Storage Time | ts | 225 | ns | VCC= -3.0V, Ic= -10mA, IB1= IB2= -1.0mA | 2 | ||
| Fall Time | tf | 75 | ns | VCC= -3.0V, Ic= -10mA, IB1= IB2= -1.0mA | 2 | ||
| Collector-Emitter Voltage | VCEO | -40 | V | 1 | |||
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current-Continuous | IC | -200 | mA | 1 | |||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 Board, TA=25℃ | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina Substrate, TA=25℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient (FR-5 Board) | RθJA | 556 | ℃/W | FR-5 Board | 1 | ||
| Thermal Resistance Junction to Ambient (Alumina Substrate) | RθJA | 417 | ℃/W | Alumina Substrate | 1 |
CAD (KiCad official)
- Symbol:
METR3906-G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
metr3906-g-etched.step/metr3906-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);metr3906-g.step/metr3906-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (7 pp, sha256
a5b24423991337fc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).