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METR3906-G

MATSUKI · Bipolar (BJT) · SOT-23

METR3906-G from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives VEBO of -5.0 V maximum and a continuous collector current of -200 mA.
2 E passive Emitter of the PNP transistor; the emitter-base voltage limit is -5.0 V.
3 C passive Collector of the PNP transistor; VCEO and VCBO are -40 V maximum and continuous IC is -200 mA.

Key specifications

Parameter Value
Manufacturer MATSUKI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (IC=-0.1mA) hFE 60 IC= -0.1mA, VCE= -1.0V 2
DC Current Gain (IC=-1.0mA) hFE 80 IC= -1.0mA, VCE= -1.0V 2
DC Current Gain (IC=-10mA) hFE 100 300 IC= -10mA, VCE= -1.0V 2
DC Current Gain (IC=-50mA) hFE 60 IC= -50mA, VCE= -1.0V 2
DC Current Gain (IC=-100mA) hFE 30 IC= -100mA, VCE= -1.0V 2
Collector-Emitter Saturation Voltage (IC=-10mA) VCE(sat) -0.25 V IC= -10mA, IB= -1.0mA 2
Collector-Emitter Saturation Voltage (IC=-50mA) VCE(sat) -0.4 V IC= -50mA, IB= -5.0mA 2
Base-Emitter Saturation Voltage (IC=-10mA) VBE(sat) -0.65 -0.85 V IC= -10mA, IB= -1.0mA 2
Base-Emitter Saturation Voltage (IC=-50mA) VBE(sat) -0.95 V IC= -50mA, IB= -5.0mA 2
Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC= -1.0mA, IB= 0 2
Collector-Base Breakdown Voltage V(BR)CBO -40 V IC= -10μA, IE= 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE= -10μA, IC= 0 2
Base Cutoff Current IBL -50 nA VCE= -30V, VEB= -3.0V 2
Collector Cutoff Current ICEX -50 nA VCE= -30V, VEB= -3.0V 2
Current-Gain-Bandwidth Product fT 250 MHz IC= -10mA, VCE= -20V, f=100MHz 2
Output Capacitance Cobo 4.5 pF VCB= -5.0V, IE=0, f=1.0MHz 2
Input Capacitance Cibo 10 pF VEB= -0.5V, IC=0, f=1.0MHz 2
Input Impedance hie 2 12 kΩ VCE= -10V, IC= -1.0mA, f=1.0KHz 2
Voltage Feedback Ratio hre 0.1 10 X10-4 VCE= -10V, IC= -1.0mA, f=1.0KHz 2
Small-Signal Current Gain hfe 100 400 VCE= -10V, IC= -1.0mA, f=1.0KHz 2
Output Admittance hoe 3 60 μmhos VCE= -10V, IC= -1.0mA, f=1.0KHz 2
Noise Figure NF 4 dB VCE= -5.0V, IC= -100μA, Rs=1.0 kΩ, f=1.0KHz 2
Delay Time td 35 ns VCC= -3.0V, VBE=0.5V, Ic= -10mA, IB1= -1.0mA 2
Rise Time tr 35 ns VCC= -3.0V, VBE=0.5V, Ic= -10mA, IB1= -1.0mA 2
Storage Time ts 225 ns VCC= -3.0V, Ic= -10mA, IB1= IB2= -1.0mA 2
Fall Time tf 75 ns VCC= -3.0V, Ic= -10mA, IB1= IB2= -1.0mA 2
Collector-Emitter Voltage VCEO -40 V 1
Collector-Base Voltage VCBO -40 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current-Continuous IC -200 mA 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board, TA=25℃ 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate, TA=25℃ 1
Operating Junction Temperature TJ -55 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Thermal Resistance Junction to Ambient (FR-5 Board) RθJA 556 ℃/W FR-5 Board 1
Thermal Resistance Junction to Ambient (Alumina Substrate) RθJA 417 ℃/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: METR3906-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: metr3906-g-etched.step / metr3906-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); metr3906-g.step / metr3906-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MATSUKI datasheet (7 pp, sha256 a5b24423991337fc, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF