component
PESDNC2FD7VB
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPESDNC2FD7VB
HXY MOSFET · ESD Protection Devices · DFN1006-2L
PESDNC2FD7VB from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, which protects one bi-directional line against IEC61000-4-2 Level 4 ESD (±20 kV air, ±15 kV contact) and IEC61000-4-4 EFT (40 A). |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode, which protects one bi-directional line against IEC61000-4-2 Level 4 ESD (±20 kV air, ±15 kV contact) and IEC61000-4-4 EFT (40 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20μs) | PPP | 130 | W | tp = 8/20μs | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD contact discharge | -15 | 15 | KV | contact discharge | 1 | ||
| ESD air discharge | -20 | 20 | KV | air discharge | 1 | ||
| EFT surge current | 40 | A | IEC61000-4-4 (EFT) | 1 | |||
| Maximum lead temperature for soldering | 260 | during 10s | 1 | ||||
| Reverse stand-off voltage | VRWM | 7 | V | 2 | |||
| Reverse leakage current | IR | 1 | uA | @ VRWM | 2 | ||
| Breakdown voltage | VBR | 7.2 | V | @ IT (Note 1) = 1.0 mA | 2 | ||
| Clamping voltage at IPP=3 A | VC | 13 | V | @ IPP=3 A (surge current per Figure 2) | 2 | ||
| Clamping voltage at max IPP | VC | 17 | V | @ Max IPP (surge current per Figure 2) | 2 | ||
| Peak pulse current | IPP | 9 | A | surge current per Figure 2 | 2 | ||
| Peak pulse power | PPK | 153 | W | surge current per Figure 2 | 2 | ||
| Device capacitance | C | 8 | pF | 2 | |||
| Dynamic resistance (TLP) | R(dynamic) | 0.24 | @16A(TLP) | 2 |
CAD (KiCad official)
- Symbol:
PESDNC2FD7VB - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
pesdnc2fd7vb-etched.step/pesdnc2fd7vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pesdnc2fd7vb.step/pesdnc2fd7vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
9ad056d0b08229dd, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).