component

PESDNC2FD7VB

Public Made by Adom

by adom

HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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PESDNC2FD7VB

HXY MOSFET · ESD Protection Devices · DFN1006-2L

PESDNC2FD7VB from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bi-directional ESD protection diode, which protects one bi-directional line against IEC61000-4-2 Level 4 ESD (±20 kV air, ±15 kV contact) and IEC61000-4-4 EFT (40 A).
2 2 passive The other terminal of the bi-directional ESD protection diode, which protects one bi-directional line against IEC61000-4-2 Level 4 ESD (±20 kV air, ±15 kV contact) and IEC61000-4-4 EFT (40 A).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (tp = 8/20μs) PPP 130 W tp = 8/20μs 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -40 125 °C 1
Maximum junction temperature Tj 150 °C 1
ESD contact discharge -15 15 KV contact discharge 1
ESD air discharge -20 20 KV air discharge 1
EFT surge current 40 A IEC61000-4-4 (EFT) 1
Maximum lead temperature for soldering 260 during 10s 1
Reverse stand-off voltage VRWM 7 V 2
Reverse leakage current IR 1 uA @ VRWM 2
Breakdown voltage VBR 7.2 V @ IT (Note 1) = 1.0 mA 2
Clamping voltage at IPP=3 A VC 13 V @ IPP=3 A (surge current per Figure 2) 2
Clamping voltage at max IPP VC 17 V @ Max IPP (surge current per Figure 2) 2
Peak pulse current IPP 9 A surge current per Figure 2 2
Peak pulse power PPK 153 W surge current per Figure 2 2
Device capacitance C 8 pF 2
Dynamic resistance (TLP) R(dynamic) 0.24 @16A(TLP) 2

CAD (KiCad official)

  • Symbol: PESDNC2FD7VB
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: pesdnc2fd7vb-etched.step / pesdnc2fd7vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pesdnc2fd7vb.step / pesdnc2fd7vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 9ad056d0b08229dd, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF