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TM10N06SI
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM10N06SI
Tritech MOS · MOSFETs · SOT-89-3L
TM10N06SI from Tritech MOS, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates VDS at 60 V and continuous drain current ID at 10 A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no source-specific limit, with the 60 V VDS and 10 A ID ratings referenced between drain and source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 40 | 46 | mΩ | VGS=10V, ID=15A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 47 | 59 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 10 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 37 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=15A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 10 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 6.8 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | Note 2 | 1 | ||
| Single Pulse Avalanche Energy | EAS | 6.3 | mJ | Note 3 | 1 | ||
| Total Power Dissipation | PD | 4 | W | Note 3 | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Note 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 6.6 | ℃/W | Note 1 | 1 |
CAD (KiCad official)
- Symbol:
TM10N06SI - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
tm10n06si-etched.step/tm10n06si-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm10n06si.step/tm10n06si.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (7 pp, sha256
1659b2c45cbb30cc, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).