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TM10N06SI

Tritech MOS · MOSFETs · SOT-89-3L

TM10N06SI from Tritech MOS, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±20 V.
2 D passive Drain terminal of the N-channel MOSFET; the datasheet rates VDS at 60 V and continuous drain current ID at 10 A at TC=25°C.
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives no source-specific limit, with the 60 V VDS and 10 A ID ratings referenced between drain and source.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOT-89-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 40 46 mΩ VGS=10V, ID=15A 2
Static Drain-Source on-Resistance RDS(on) 47 59 mΩ VGS=4.5V, ID=10A 2
Maximum Continuous Drain to Source Diode Forward Current IS 10 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 37 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=15A 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 10 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 6.8 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 37 A Note 2 1
Single Pulse Avalanche Energy EAS 6.3 mJ Note 3 1
Total Power Dissipation PD 4 W Note 3 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Note 1 1
Thermal Resistance Junction-Case RθJC 6.6 ℃/W Note 1 1

CAD (KiCad official)

  • Symbol: TM10N06SI
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3L (KiCad packages3D, STEP)
  • 3D model files: tm10n06si-etched.step / tm10n06si-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm10n06si.step / tm10n06si.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (7 pp, sha256 1659b2c45cbb30cc, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF