# TM10N06SI

**Tritech MOS** · MOSFETs · SOT-89-3L

TM10N06SI from Tritech MOS, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates VDS at 60 V and continuous drain current ID at 10 A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no source-specific limit, with the 60 V VDS and 10 A ID ratings referenced between drain and source. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 40 | 46 | mΩ | VGS=10V, ID=15A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 47 | 59 | mΩ | VGS=4.5V, ID=10A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 10 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 37 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=15A | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 10 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 6.8 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 37 | A | Note 2 | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 6.3 | mJ | Note 3 | 1 |
| Total Power Dissipation | PD |  |  | 4 | W | Note 3 | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W | Note 1 | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 6.6 | ℃/W | Note 1 | 1 |

## CAD (KiCad official)

- Symbol: `TM10N06SI`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files: `tm10n06si-etched.step` / `tm10n06si-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm10n06si.step` / `tm10n06si.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906536439476224) (7 pp, sha256 `1659b2c45cbb30cc`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tm10n06si-datasheet.pdf)