component
NTMD3P03R2G
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTMD3P03R2G
UMW · MOSFETs · SOP-8
NTMD3P03R2G from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the datasheet gives no separate limit for this pin beyond the device ratings (VDSS -30 V, VGSS ±20 V). |
| 2 | G1 | input | Gate terminal of MOSFET 1; VGSS is rated ±20 V and the datasheet specifies VGS(th) of -1 V to -2.5 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the datasheet gives no separate limit for this pin beyond the device ratings (VDSS -30 V, VGSS ±20 V). |
| 4 | G2 | input | Gate terminal of MOSFET 2; VGSS is rated ±20 V and the datasheet specifies VGS(th) of -1 V to -2.5 V. |
| 5 | D1,D2 | passive | Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V. |
| 6 | D1,D2 | passive | Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V. |
| 7 | D1,D2 | passive | Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V. |
| 8 | D1,D2 | passive | Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=250µA | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID=-250µA | 3 |
| Static Drain-to-Source On-State Resistance (VGS=-10V) | RDS(ON) | 63 | 85 | mΩ | VGS=-10V, ID=-3.05A | 3 | |
| Static Drain-to-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | 90 | 125 | mΩ | VGS=-4.5V, ID=-1.5A | 3 | |
| Input Capacitance | Ciss | 520 | 750 | pF | VDS=-24V, VGS=0V, f = 1.0 MHz | 3 | |
| Output Capacitance | Coss | 170 | 325 | pF | VDS=-24V, VGS=0V, f = 1.0 MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 70 | 135 | pF | VDS=-24V, VGS=0V, f = 1.0 MHz | 3 | |
| Turn-On Delay Time | tD(on) | 12 | 22 | ns | VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω | 3 | |
| Rise Time | tr | 16 | 30 | ns | VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 45 | 80 | ns | VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω | 3 | |
| Fall Time | tf | 45 | 80 | ns | VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω | 3 | |
| Total Gate Charge | Qtot | 16 | 25 | nC | VDS=-24V, VGS=-10V, ID=-3.05A | 3 | |
| Diode Forward On-Voltage | VSD | -1.25 | V | IS=-3.05A, VGS=0V | 4 | ||
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 171 | °C/W | Junction-to-Ambient (Note 1) | 1 | ||
| Total Power Dissipation | PD | 0.73 | W | TA=25°C (Note 1) | 1 | ||
| Continuous Drain Current @ 25°C | ID | -2.34 | A | @ 25°C (Note 1) | 1 | ||
| Continuous Drain Current @ 70°C | ID | -1.87 | A | @ 70°C (Note 1) | 1 | ||
| Pulsed Drain Current | IDM | -8 | A | Note 4 (Note 1) | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | °C/W | Junction-to-Ambient (Note 2) | 1 | ||
| Total Power Dissipation | PD | 1.25 | W | TA=25°C (Note 2) | 1 | ||
| Continuous Drain Current @ 25°C | ID | -3.05 | A | @ 25°C (Note 2) | 1 | ||
| Continuous Drain Current @ 70°C | ID | -2.44 | A | @ 70°C (Note 2) | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | Note 4 (Note 2) | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | Junction-to-Ambient (Note 3) | 2 | ||
| Total Power Dissipation | PD | 2 | W | TA=25°C (Note 3) | 2 | ||
| Continuous Drain Current @ 25°C | ID | -3.86 | A | @ 25°C (Note 3) | 2 | ||
| Continuous Drain Current @ 70°C | ID | -3.1 | A | @ 70°C (Note 3) | 2 | ||
| Pulsed Drain Current | IDM | -15 | A | Note 4 (Note 3) | 2 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 140 | mJ | Starting TJ=25°C, VDD=-30Vdc, VGS=-4.5Vdc, Peak IL=-7.5 Apk, L=5 mH, RG=25Ω | 2 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8” from case for 10 seconds | 2 |
CAD (KiCad official)
- Symbol:
NTMD3P03R2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ntmd3p03r2g-etched.step/ntmd3p03r2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntmd3p03r2g.step/ntmd3p03r2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
364cdac1c1fc642b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).