main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers ntmd3p03r2g: viewers · Ray 23d ago
ntmd3p03r2g-etched.glb Publish 0.1.0 · Ray 23d ago
ntmd3p03r2g-etched.step ntmd3p03r2g: factory component page (tier=lcsc) · Ray 23d ago
ntmd3p03r2g-hero.glb ntmd3p03r2g: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
ntmd3p03r2g-hero.overlay.json Publish 0.1.0 · Ray 23d ago
ntmd3p03r2g.glb Publish 0.1.0 · Ray 23d ago
ntmd3p03r2g.kicad_mod Publish 0.1.0 · Ray 23d ago
ntmd3p03r2g.kicad_sym Publish 0.1.0 · Ray 23d ago
ntmd3p03r2g.lbr Publish 0.1.0 · Ray 23d ago
ntmd3p03r2g.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

NTMD3P03R2G

UMW · MOSFETs · SOP-8

NTMD3P03R2G from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1; the datasheet gives no separate limit for this pin beyond the device ratings (VDSS -30 V, VGSS ±20 V).
2 G1 input Gate terminal of MOSFET 1; VGSS is rated ±20 V and the datasheet specifies VGS(th) of -1 V to -2.5 V.
3 S2 passive Source terminal of MOSFET 2; the datasheet gives no separate limit for this pin beyond the device ratings (VDSS -30 V, VGSS ±20 V).
4 G2 input Gate terminal of MOSFET 2; VGSS is rated ±20 V and the datasheet specifies VGS(th) of -1 V to -2.5 V.
5 D1,D2 passive Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V.
6 D1,D2 passive Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V.
7 D1,D2 passive Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V.
8 D1,D2 passive Drain terminal of MOSFET 1 or 2; the drain-source voltage is rated VDSS = -30 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID=250µA 3
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) -1 -1.7 -2.5 V VDS=VGS, ID=-250µA 3
Static Drain-to-Source On-State Resistance (VGS=-10V) RDS(ON) 63 85 mΩ VGS=-10V, ID=-3.05A 3
Static Drain-to-Source On-State Resistance (VGS=-4.5V) RDS(ON) 90 125 mΩ VGS=-4.5V, ID=-1.5A 3
Input Capacitance Ciss 520 750 pF VDS=-24V, VGS=0V, f = 1.0 MHz 3
Output Capacitance Coss 170 325 pF VDS=-24V, VGS=0V, f = 1.0 MHz 3
Reverse Transfer Capacitance Crss 70 135 pF VDS=-24V, VGS=0V, f = 1.0 MHz 3
Turn-On Delay Time tD(on) 12 22 ns VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω 3
Rise Time tr 16 30 ns VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω 3
Turn-Off Delay Time tD(off) 45 80 ns VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω 3
Fall Time tf 45 80 ns VDD=-24V, ID=-3.05A, VGS=-10V, RG=6Ω 3
Total Gate Charge Qtot 16 25 nC VDS=-24V, VGS=-10V, ID=-3.05A 3
Diode Forward On-Voltage VSD -1.25 V IS=-3.05A, VGS=0V 4
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Junction-to-Ambient Thermal Resistance RθJA 171 °C/W Junction-to-Ambient (Note 1) 1
Total Power Dissipation PD 0.73 W TA=25°C (Note 1) 1
Continuous Drain Current @ 25°C ID -2.34 A @ 25°C (Note 1) 1
Continuous Drain Current @ 70°C ID -1.87 A @ 70°C (Note 1) 1
Pulsed Drain Current IDM -8 A Note 4 (Note 1) 1
Junction-to-Ambient Thermal Resistance RθJA 100 °C/W Junction-to-Ambient (Note 2) 1
Total Power Dissipation PD 1.25 W TA=25°C (Note 2) 1
Continuous Drain Current @ 25°C ID -3.05 A @ 25°C (Note 2) 1
Continuous Drain Current @ 70°C ID -2.44 A @ 70°C (Note 2) 1
Pulsed Drain Current IDM -12 A Note 4 (Note 2) 1
Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W Junction-to-Ambient (Note 3) 2
Total Power Dissipation PD 2 W TA=25°C (Note 3) 2
Continuous Drain Current @ 25°C ID -3.86 A @ 25°C (Note 3) 2
Continuous Drain Current @ 70°C ID -3.1 A @ 70°C (Note 3) 2
Pulsed Drain Current IDM -15 A Note 4 (Note 3) 2
Operating and Storage Temperature Range TJ, Tstg -55 150 °C 2
Single Pulse Drain-to-Source Avalanche Energy EAS 140 mJ Starting TJ=25°C, VDD=-30Vdc, VGS=-4.5Vdc, Peak IL=-7.5 Apk, L=5 mH, RG=25Ω 2
Maximum Lead Temperature for Soldering Purposes TL 260 °C 1/8” from case for 10 seconds 2

CAD (KiCad official)

  • Symbol: NTMD3P03R2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ntmd3p03r2g-etched.step / ntmd3p03r2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmd3p03r2g.step / ntmd3p03r2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 364cdac1c1fc642b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF