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WPM5001-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM5001-3
WILLSEMI Will Semicon · MOSFETs · SOT-23
WPM5001-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate with ESD protection, gate-source voltage limited to ±20 V and threshold of -0.8 to -2.0 V. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode runs between source and drain. |
| 3 | D | passive | Drain; drain-source voltage rated -50 V with continuous drain current of -0.2 A (10 s, TA=25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -50 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -0.2 | A | TA=25°C, t≤10 s; footnote a,d (1 in² pad) | 2 | ||
| Continuous Drain Current | ID | -0.18 | A | TA=25°C, steady state; footnote a,d (1 in² pad) | 2 | ||
| Continuous Drain Current | ID | -0.16 | A | TA=70°C, t≤10 s; footnote a,d (1 in² pad) | 2 | ||
| Continuous Drain Current | ID | -0.14 | A | TA=70°C, steady state; footnote a,d (1 in² pad) | 2 | ||
| Continuous Drain Current | ID | -0.19 | A | TA=25°C, t≤10 s; footnote b (minimum pad) | 2 | ||
| Continuous Drain Current | ID | -0.17 | A | TA=25°C, steady state; footnote b (minimum pad) | 2 | ||
| Continuous Drain Current | ID | -0.15 | A | TA=70°C, t≤10 s; footnote b (minimum pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.4 | W | TA=25°C, t≤10 s; footnote a,d (1 in² pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.37 | W | TA=25°C, steady state; footnote a,d (1 in² pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.29 | W | TA=70°C, t≤10 s; footnote a,d (1 in² pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.23 | W | TA=70°C, steady state; footnote a,d (1 in² pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.3 | W | TA=25°C, steady state; footnote b (minimum pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.26 | W | TA=70°C, t≤10 s; footnote b (minimum pad) | 2 | ||
| Maximum Power Dissipation | PD | 0.22 | W | TA=70°C, steady state; footnote b (minimum pad) | 2 | ||
| Pulsed Drain Current | IDM | -0.8 | A | Pulse width<380µs, duty cycle<2% (footnote c) | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -0.8 | -1.5 | -2 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-Source On-resistance | RDS(on) | 3 | 8 | Ω | VGS = -10V, ID = -0.4A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 3.5 | 10 | Ω | VGS = -5V, ID = -0.3A | 3 | |
| Gate-to-source Leakage Current | IGSS | -5 | 5 | uA | VDS = 0 V, VGS = ±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -50V, VGS = 0V | 3 | ||
| Forward Voltage | VSD | -0.9 | -1.5 | V | VGS = 0 V, IS = -0.25A | 3 | |
| Junction-to-Ambient Thermal Resistance (footnote a, t≤10 s) | RθJA | 240 | 270 | °C/W | t≤10 s; surface mounted on FR-4, 1 in² pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (footnote a, steady state) | RθJA | 280 | 335 | °C/W | Steady state; surface mounted on FR-4, 1 in² pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (footnote b, t≤10 s) | RθJA | 270 | 300 | °C/W | t≤10 s; surface mounted on FR-4, minimum pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (footnote b, steady state) | RθJA | 300 | 350 | °C/W | Steady state; surface mounted on FR-4, minimum pad, 1oz copper | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 130 | 180 | °C/W | Steady state | 2 |
CAD (KiCad official)
- Symbol:
WPM5001-3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wpm5001-3-etched.step/wpm5001-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm5001-3.step/wpm5001-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256
6e17976c5651bfe9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).