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IRF9321PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF9321PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF9321PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V. |
| 4 | G | input | Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20 V and a threshold of -1.2 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -15 | A | VGS @ -10V, TA=25℃ (note 1) | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -11 | A | VGS @ -10V, TA=70℃ (note 1) | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | note 2 | 1 | ||
| Single Pulse Avalanche Energy | EAS | 151 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-55A (note 3) | 1 | ||
| Avalanche Current | IAS | -55 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ (note 4) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 8.7 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 13.5 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -14 | A | VG=VD=0V, Force Current (notes 1,5) | 2 | ||
| Pulsed Source Current | ISM | -56 | A | notes 2,5 | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.018 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 5.04 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 25 | S | VDS=-5V, ID=-12A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 30 | nC | VDS=-15V, VGS=-4.5V, ID=-12A | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDS=-15V, VGS=-4.5V, ID=-12A | 2 | ||
| Gate-Drain Charge | Qgd | 10.4 | nC | VDS=-15V, VGS=-4.5V, ID=-12A | 2 | ||
| Turn-On Delay Time | Td(on) | 9.4 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Rise Time | Tr | 10.2 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Turn-Off Delay Time | Td(off) | 117 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Fall Time | Tf | 24 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Input Capacitance | Ciss | 3448 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 508 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 421 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 19.4 | nS | IF=-10A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 9.1 | nC | IF=-10A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Thermal Resistance Junction-Ambient (t≦10s) | RθJA | 40 | ℃/W | Surface mounted on 1 inch² FR-4, 2OZ copper, t≦10s (note 1) | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | Surface mounted on 1 inch² FR-4, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | note 1 | 1 |
CAD (KiCad official)
- Symbol:
IRF9321PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf9321pbf-hxy-etched.step/irf9321pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9321pbf-hxy.step/irf9321pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
6b119ae93025db82, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).