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Contents

README

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IRF9321PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF9321PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V.
2 S passive Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V.
3 S passive Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V.
4 G input Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20 V and a threshold of -1.2 to -2.5 V.
5 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃.
6 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃.
7 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃.
8 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -15 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ -15 A VGS @ -10V, TA=25℃ (note 1) 1
Continuous Drain Current ID@TA=70℃ -11 A VGS @ -10V, TA=70℃ (note 1) 1
Pulsed Drain Current IDM -56 A note 2 1
Single Pulse Avalanche Energy EAS 151 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-55A (note 3) 1
Avalanche Current IAS -55 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W TA=25℃ (note 4) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 5.8 8.7 mΩ VGS=-10V, ID=-12A 2
Static Drain-Source On-Resistance RDS(ON) 8.5 13.5 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -14 A VG=VD=0V, Force Current (notes 1,5) 2
Pulsed Source Current ISM -56 A notes 2,5 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.018 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 5.04 mV/℃ 2
Forward Transconductance gfs 25 S VDS=-5V, ID=-12A 2
Total Gate Charge (-4.5V) Qg 30 nC VDS=-15V, VGS=-4.5V, ID=-12A 2
Gate-Source Charge Qgs 10 nC VDS=-15V, VGS=-4.5V, ID=-12A 2
Gate-Drain Charge Qgd 10.4 nC VDS=-15V, VGS=-4.5V, ID=-12A 2
Turn-On Delay Time Td(on) 9.4 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 10.2 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Turn-Off Delay Time Td(off) 117 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Fall Time Tf 24 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Input Capacitance Ciss 3448 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 508 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 421 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 19.4 nS IF=-10A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 9.1 nC IF=-10A, dI/dt=100A/µs, TJ=25℃ 2
Thermal Resistance Junction-Ambient (t≦10s) RθJA 40 ℃/W Surface mounted on 1 inch² FR-4, 2OZ copper, t≦10s (note 1) 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W Surface mounted on 1 inch² FR-4, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 24 ℃/W note 1 1

CAD (KiCad official)

  • Symbol: IRF9321PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf9321pbf-hxy-etched.step / irf9321pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9321pbf-hxy.step / irf9321pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 6b119ae93025db82, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF