component
KPE4403A2
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKPE4403A2
KIA Semicon Tech · MOSFETs · SOP-8
KPE4403A2 from KIA Semicon Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rated -30 V. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage rated ±20 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rated -30 V. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage rated ±20 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current -5.0 A at TC=25°C, pulsed -25 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, internally common with pin 5; continuous drain current -5.0 A at TC=25°C. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current -5.0 A at TC=25°C, pulsed -25 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, internally common with pin 7; continuous drain current -5.0 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -30 | V | 1 | |||
| Gate-source voltage | VGS | 20 | V | 1 | |||
| Continuous drain current | ID | -5 | A | VGS@-10V, TC=25ºC | 1 | ||
| Continuous drain current | ID | -3.9 | A | TC=70ºC | 1 | ||
| Pulsed drain current | IDM | -25 | A | 1 | |||
| Single pulse avalanche energy | EAS | 18.1 | mJ | 1 | |||
| Avalanche current | IAS | -19 | A | 1 | |||
| Total power dissipation | PD | 1.5 | W | TA=25ºC | 1 | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | ºC | 1 | ||
| Thermal resistance-junction to ambient | RθJA | 85 | ºC/W | 1 | |||
| Thermal resistance-junction to case | RθJC | 25 | ºC/W | 1 | |||
| Drain-Source breakdown voltage | BVDSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=-24V,VGS=0V,TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | μA | VDS=-24V,VGS=0V,TJ=55°C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=+20V,VDS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | -1.2 | -2.5 | V | VDS=VGS, ID=-250μA | 2 | |
| Static drain-source on-resistance | RDS(on) | 42 | 55 | mΩ | VGS=-10V,ID=-4A | 2 | |
| Static drain-source on-resistance | RDS(on) | 64 | 78 | mΩ | VGS=-4.5V,ID=-3A | 2 | |
| Continuous source current | IS | -5 | A | VG=VD=0V,Force current | 2 | ||
| Pulsed source current | ISM | -25 | A | 2 | |||
| Diode forward voltage | VSD | -1.3 | V | VGS=0V,IS=-1A, TJ=25°C | 2 |
CAD (KiCad official)
- Symbol:
KPE4403A2 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
kpe4403a2-etched.step/kpe4403a2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kpe4403a2.step/kpe4403a2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (4 pp, sha256
94dd96d49bdd8c57, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).