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KPE4403A2

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KIA Semicon Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KPE4403A2

KIA Semicon Tech · MOSFETs · SOP-8

KPE4403A2 from KIA Semicon Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; drain-source voltage rated -30 V.
2 G1 input Gate of P-channel MOSFET 1; gate-source voltage rated ±20 V.
3 S2 passive Source of P-channel MOSFET 2; drain-source voltage rated -30 V.
4 G2 input Gate of P-channel MOSFET 2; gate-source voltage rated ±20 V.
5 D2 passive Drain of P-channel MOSFET 2; continuous drain current -5.0 A at TC=25°C, pulsed -25 A.
6 D2 passive Drain of P-channel MOSFET 2, internally common with pin 5; continuous drain current -5.0 A at TC=25°C.
7 D1 passive Drain of P-channel MOSFET 1; continuous drain current -5.0 A at TC=25°C, pulsed -25 A.
8 D1 passive Drain of P-channel MOSFET 1, internally common with pin 7; continuous drain current -5.0 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -30 V 1
Gate-source voltage VGS 20 V 1
Continuous drain current ID -5 A VGS@-10V, TC=25ºC 1
Continuous drain current ID -3.9 A TC=70ºC 1
Pulsed drain current IDM -25 A 1
Single pulse avalanche energy EAS 18.1 mJ 1
Avalanche current IAS -19 A 1
Total power dissipation PD 1.5 W TA=25ºC 1
Junction and storage temperature range TJ ,TSTG -55 150 ºC 1
Thermal resistance-junction to ambient RθJA 85 ºC/W 1
Thermal resistance-junction to case RθJC 25 ºC/W 1
Drain-Source breakdown voltage BVDSS -30 V VGS=0V, ID=-250μA 2
Drain-Source Leakage Current IDSS 1 μA VDS=-24V,VGS=0V,TJ=25°C 2
Drain-Source Leakage Current IDSS 5 μA VDS=-24V,VGS=0V,TJ=55°C 2
Gate-source leakage current IGSS 100 nA VGS=+20V,VDS=0V 2
Gate threshold voltage VGS(th) -1.2 -2.5 V VDS=VGS, ID=-250μA 2
Static drain-source on-resistance RDS(on) 42 55 mΩ VGS=-10V,ID=-4A 2
Static drain-source on-resistance RDS(on) 64 78 mΩ VGS=-4.5V,ID=-3A 2
Continuous source current IS -5 A VG=VD=0V,Force current 2
Pulsed source current ISM -25 A 2
Diode forward voltage VSD -1.3 V VGS=0V,IS=-1A, TJ=25°C 2

CAD (KiCad official)

  • Symbol: KPE4403A2
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: kpe4403a2-etched.step / kpe4403a2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kpe4403a2.step / kpe4403a2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (4 pp, sha256 94dd96d49bdd8c57, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF